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Patent

Method for Manufacturing a Semiconductor Device

TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Citations
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References
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Proceedings ArticleDOI

RFCPUs on glass and plastic substrates fabricated by TFT transfer technology

TL;DR: The development of the world's first flexible RFCPUs (8bit, passive type) by adding to the CPU an antenna, an analog circuit, an encryption function and an RFID function, which operate using an RF signal with a frequency of 13.56MHz.
Journal ArticleDOI

The Phase Relations in the In2O3-Al2ZnO4-ZnO System at 1350°C

TL;DR: In this article, the phase relations in the In 2 O 3 -Al 2 ZnO 4 -ZnO system at 1350°C are determined by a classical quenching method.
Journal ArticleDOI

Electron microscopy of a cholesteric liquid crystal and its blue phase

TL;DR: In this article, the successful application of the freeze fracture technique for obtaining transmission-electron-microscope pictures of a thermotropic cholesteric material and its blue phase was reported.
Patent

Active matrix substrate and its producing process

TL;DR: In this article, the authors proposed an active matrix substrate with a short circuit member having a convenient structure of high charge dispersiveness and functioning even after a packaging process, which substantially eliminates a leak current in a low voltage region.
Patent

Semiconductor memory and its test method

TL;DR: In this paper, a memory is provided with a controller 1 inputting a specific signal to an external terminal and discriminating a contact state of each terminal and a storage section 4 of expected value data, the controller 1 has a recognizing section recognizing whether command data inputted from data input/output terminals DQ0-DGn are a discrimination executing command or not.