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Patent

Method for Manufacturing a Semiconductor Device

TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Citations
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Organic light emitting display apparatus

TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
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Method for Manufacturing Semiconductor Device

TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
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Method of Manufacturing a Semiconductor Device

TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
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Method for manufacturing semiconductor device and laser irradiation apparatus

TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
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Display apparatus with function which makes gradiation control easier

TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent

Selective removal of material by irradiation

TL;DR: In this paper, an apparatus and method for selectively removing undesired material from the surface of a substrate provides a flow of inert gas over the undesired surface while irradiating the undesirable material with energetic photons.
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Method for fabricating a semiconductor device

TL;DR: In this article, a method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed.
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Removal of material by polarized radiation

TL;DR: In this paper, an apparatus and method for selectively removing undesired material from the surface of a substrate provides a flow of inert gas over the substrate surface while irradiating the undesired materials with energetic photons.
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Semiconductor device and manufacturing method thereof

TL;DR: In this article, a GaN-based semiconductor layer is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region and an electron supply layer that has a larger band gap than the electron Conduction layer.
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Photoelectric conversion device and manufacturing method thereof

TL;DR: In this article, a photoelectric conversion device having a photodiode having a photo-electric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means is presented.