Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
Citations
More filters
Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
More filters
Patent
Manufacture of semiconductor device
TL;DR: In this paper, the inner surface of a groove formed in a silicon substrate is cleaned using a cleaning liquid which is faster in the etch rate of the etching mask of the silicon substrate than in the substrate, thereby beveling the opening part of the groove.
Patent
Method of manufacturing a TFT with Ge seeded amorphous Si layer
TL;DR: In this article, the active layers of an amorphous silicon film are crystallized, germanium is used as a catalytic element for facilitating crystallization, and when a heat treatment is carried out in a state where the active layer are in contact with a germium film through an opening portion provided in a mask insulating film, the activelayer made of a polysilicon film are obtained by crystal growth in a lateral direction.
Patent
Forming method of semiconductor crystallized film
TL;DR: In this article, the authors proposed a method to reduce the taking-in of oxygen atoms into an amorphous or polycrystalline semiconductor film by applying laser beams so that the upper layer section of the semiconductor material is melted but a lower section is not melted.
Patent
Method for manufacturing semiconductor device with crystallization of amorphous silicon
TL;DR: In this paper, a process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics is described, which consists of forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphized silicon film by heating and irradiating the silicon film with a laser beam or intense light equivalent thereto.
Patent
Light Emitting Element and Method of Manufacturing the Same
Akihiko Kikuchi,Katsumi Kishino +1 more
TL;DR: In this paper, columnar crystals of a nitride-base or an oxide-base compound semiconductor are grown on a substrate, where columnar columns are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms.