Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
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Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent
Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine
Katsumi Nakagawa,Toshiyuki Komatsu,Yoshiyuki Osada,Satoshi Omata,Yutaka Hirai,Takashi Nakagiri +5 more
TL;DR: A semiconductor element having the main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms was defined in this paper, where the authors considered the following elements:
Patent
Layered display device and manufacturing method therefor
TL;DR: In this paper, the authors proposed a layered liquid crystal display device MD1, where three liquid crystal layers Lb, Lg, Lr are layered between transparent substrates S and S2.
Patent
Method for fabricating an indium tin oxide electrode for a thin film transistor
TL;DR: In this article, a method and resulting structure for fabricating a thin film transistor which very effectively uses ITO as its transparent electrode is described, and the advantages of the process are to avoid the etching of the aluminium layer by ITO etching process, avoid the ITO damage by the plasma enhanced silicon nitride process and the solution of the poor adhesion between aluminium to ITO.
Patent
Semiconductor device and its manufacturing method
TL;DR: In this paper, a semiconductor substrate into which high concentration N-type impurities are introduced is bonded to a polysilicon substrate 1A in which a silicon oxide film 2 is formed on the surface.