Patent
Method for Manufacturing a Semiconductor Device
Hiroko Abe,Mikio Yukawa,Ryoji Nomura,Shunpei Semiconductor En. Lab. Co. Ltd. Yamazaki,Yukie Nemoto +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layerread more
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Patent
Organic light emitting display apparatus
Byoung-Duk Lee,Jong-hyuk Lee,Yoon-Hyeung Cho,Min-Ho Oh,So-Young Lee,Sun-young Lee,Won-jong Kim,Yong-Tak Kim,Jin-Baek Choi +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Method for manufacturing semiconductor device and laser irradiation apparatus
Koichiro Tanaka,Hirotada Oishi +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent
Display apparatus with function which makes gradiation control easier
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
References
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Patent
Photoelectric conversion device
Yukio Takasaki,Kazutaka Tsuji,Tatsuo Makishima,Tadaaki Hirai,Sachio Ishioka,Tatsuro Kawamura,Keiichi Shidara,Eikyu Hiruma,Kenkichi Tanioka,Junichi Yamazaki,Kenji Sameshima,Hirokazu Sanhaitsu M Matsubara,Kazuhisa Taketoshi +12 more
TL;DR: In this paper, a photoelectric conversion device which comprises a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (for example switching elements) for reading the electric signals.
Patent
Method of fabricating semiconductor device and method of processing substrate
TL;DR: In this paper, a glass substrate made of Corning 7059 is used as a substrate to reduce warpage, distortions, and waviness of the substrate, which makes it easy to perform mask alignments.
Journal ArticleDOI
Needle-like crystallization of Ni doped amorphous silicon thin films
TL;DR: In this paper, the crystallization behavior of Ni doped co-sputtered amorphous silicon thin films (MSP a-Si(Ni)) is investigated by means of NIR-VIS-UV transmission spectroscopy and STEM.
Patent
Manufacture of semiconductor device
Matsubara Hideaki,Nanba Takashi +1 more
TL;DR: In this paper, an oxide film is divided into a first oxide film 4 in which the impurities are accumulated and a second oxide film 5 of impurity uniformity to provide to expose the polysilicon 3.
Patent
Display device and method of manufacturing the same
TL;DR: In this paper, a display device comprises a first plastic substrate, a first adhesion layer formed in a first region of the first polycarbonate substrate, the first region being a region where a pixel region is to be formed thereon, a second adhesive layer forming in a peripheral region outside of the outer region of a first-plastic substrate, and a first thin glass layer formed on the first and second adhesion layers.