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Patent

Method for Manufacturing a Semiconductor Device

Hiroko Abe, +4 more
TLDR
In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract: 
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

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Patent

Organic light emitting display apparatus

Byoung-Duk Lee, +8 more
TL;DR: In this paper, an organic light-emitting display (OLED) was proposed to display an image with high contrast and/or impact resistance, where a sealing member was placed on the organic light emitting device and a semitransparent film on a surface of the sealing member facing away from the OLED device.
Patent

Method for Manufacturing Semiconductor Device

Hidekazu Miyairi, +3 more
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent

Method of Manufacturing a Semiconductor Device

Masaaki Hiroki, +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent

Method for manufacturing semiconductor device and laser irradiation apparatus

Koichiro Tanaka, +1 more
TL;DR: In this paper, the authors proposed an optical path difference between the split beams to reduce optical interference, which is defined as a length equivalent to the pulse width of the laser beam or more and less than the length of the pulse repetition interval.
Patent

Display apparatus with function which makes gradiation control easier

Yukihiro Noguchi
TL;DR: In this article, luminance data being applied to a data line is set in a drive transistor in the form of a data voltage, and a current corresponding to the data voltage thus set flows to the drive transistor and simultaneously the same current flows to a first current mirror transistor.
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Patent

Method of preparing a semiconductor having a controlled crystal orientation

Hongyong Zhang, +5 more
TL;DR: In this paper, a semiconductor device with needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis is described. And a method for preparing the semiconductor devices comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphized silicon film containing the catalytic elements at a low temperature to crystallize the silicon film.
Patent

Method for manufacturing a semiconductor device containing a crystallization promoting material

Hisashi Ohtani, +2 more
TL;DR: In this article, a method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconducting layer at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, and Sb.
Patent

Process for fabricating semiconductor device

Hisashi Ohtani, +2 more
TL;DR: A process for fabricating a semiconductor device comprising the steps of introducing a metallic element which accelerates the crystallization of the amorphous silicon film, applying heat treatment to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline Silicon film; and heat treating the crystal silicon film irradiated with a laserbeam or a light was described in this article.
Patent

Method of making a thin film transistor with laser recrystallized source and drain

Shunpei Yamazaki
TL;DR: In this article, an insulated gate field effect transistor is constructed by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate with the gate electrode functioning as a mask to selectively crystallize the source and drain regions.
Patent

Method for photo annealing non-single crystalline semiconductor films

Shunpei Yamazaki, +10 more
TL;DR: In this article, an improved semiconductor processing is described, which demonstrates the SEL effect instead of the Staebler-Wronski effect, and a neutralizer is introduced to the photoannealed semiconductor.