Journal ArticleDOI
Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet
TLDR
In this paper, a physics-based analytical model of electric-field-dependent electron mobility (μ) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime is presented.Abstract:
In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (μ) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate μ over a wide range of temperature. We also demonstrate the variation of μ with carrier concentration as well as the longitudinal electric field. We find that at high electric field , the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.read more
Citations
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Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors
TL;DR: A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption, and it is found that the gate oxide materials with large relative dielectric constant have a significant effect on the gatecontrolled SBH lowering.
Journal ArticleDOI
Aggregation prevention: reduction of graphene oxide in mixed medium of alkylphenol polyoxyethylene (7) ether and 2-methoxyethanol
TL;DR: In this paper, a mixed medium of alkylphenol polyoxyethylene (7) ether (OP-7) and 2-methoxyethanol (EGM) was used for the preparation of graphene.
Journal ArticleDOI
Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime
Abhishek Kumar Upadhyay,Ajay Kushwaha,Priyank Rastogi,Yogesh Singh Chauhan,Santosh Kumar Vishvakarma +4 more
TL;DR: In this article, an analytical drain current model based on ballistic and drift-diffusive charge densities, backscattering coefficient, and quasi-ballistic mobility was proposed for single and double-gate GFETs.
Journal ArticleDOI
Monte Carlo studies of low-field electron transport in monolayer silicene and graphene
TL;DR: In this article, electron mobility and diffusion coefficients in monolayer silicene and graphene are calculated by Monte Carlo simulations using a simplified band structure with linear energy bands. But the authors do not consider the effect of electron scattering on electron mobility.
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Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage
TL;DR: A SLG thermoelectric parameter model considering carrier concentration and mobility with temperature and gate voltage is proposed and can provide a theoretical basis for analyzing the thermoeLECTric characteristics of SLG.
References
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Book
Theory of elasticity
TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
Journal ArticleDOI
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
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Ultrahigh electron mobility in suspended graphene
Kirill I. Bolotin,K. J. Sikes,Zhigang Jiang,Martin Klima,Geoffrey Fudenberg,James Hone,Philip Kim,Horst Stormer,Horst Stormer +8 more
TL;DR: In this paper, a single layer graphene was suspended ∼150nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching.
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Giant intrinsic carrier mobilities in graphene and its bilayer
Sergey V. Morozov,K. S. Novoselov,Mikhail I. Katsnelson,Fred Schedin,D. C. Elias,John A. Jaszczak,A. K. Geim +6 more
TL;DR: Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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Intrinsic and extrinsic performance limits of graphene devices on SiO2.
TL;DR: It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.