Journal ArticleDOI
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
TLDR
It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.Abstract:
The great variability in the electrical properties of multinary oxide materials, ranging from insulating, through semiconducting to metallic behaviour, has given rise to the idea of modulating the electronic properties on a nanometre scale for high-density electronic memory devices. A particularly promising aspect seems to be the ability of perovskites to provide bistable switching of the conductance between non-metallic and metallic behaviour by the application of an appropriate electric field. Here we demonstrate that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO(3). The phenomenon is shown to originate from local modulations of the oxygen content and to be related to the self-doping capability of the early transition metal oxides. Our results show that extended defects, such as dislocations, can act as bistable nanowires and hold technological promise for terabit memory devices.read more
Citations
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
References
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John P. Perdew,J. A. Chevary,S. H. Vosko,Koblar A. Jackson,Mark R. Pederson,David J. Singh,Carlos Fiolhais +6 more
TL;DR: A way is found to visualize and understand the nonlocality of exchange and correlation, its origins, and its physical effects as well as significant interconfigurational and interterm errors remain.
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Band theory and Mott insulators: Hubbard U instead of Stoner I.
TL;DR: A form for the exchange-correlation potential in local-density band theory, appropriate for Mott insulators, and finds that all late-3d-transition-metal monoxides, as well as the parent compounds of the high-${\mathit{T}$ compounds, are large-gap magnetic insulators of the charge-transfer type.
Journal ArticleDOI
Full-potential self-consistent linearized-augmented-plane-wave method for calculating the electronic structure of molecules and surfaces: O 2 molecule
TL;DR: In this article, the authors generalized the linearized-augmented-plane-wave (LAPW) method for thin films by removing the remaining shape approximation to the potential inside the atomic spheres, and implemented a new technique for solving Poisson's equation for a general charge density and potential is described and implemented in the film LAPW method.
Journal ArticleDOI
Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
Journal ArticleDOI
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Byung Joon Choi,Doo Seok Jeong,Seong Keun Kim,C. Rohde,Seol Choi,J. H. Oh,Honggon Kim,Cheol Seong Hwang,K. Szot,Rainer Waser,B. Reichenberg,S. Tiedke +11 more
TL;DR: In this article, the resistive switching mechanism of 20-to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by currentvoltage measurements and conductive atomic force microscopy.