Journal ArticleDOI
Percolation models for gate oxide breakdown
TLDR
In this article, the formation of a percolation path across a finite lattice is used to model dielectric breakdown in thin samples, and the critical defect density for breakdown shows a strong decrease with thickness below about 5 nm, then becomes constant below 3 nm.Abstract:
Computer calculations of the formation of a percolation path across a finite lattice are used to model dielectric breakdown. The classical scaling relations for percolation are expected to be valid only for large (finite) systems near pc. We investigate the opposite limit of very small samples, comparable to the lattice spacing. It is shown that relatively simple numerical calculations can quantitatively describe the statistics and thickness dependence of oxide breakdown in thin samples. The critical defect density for breakdown shows a strong decrease with thickness below about 5 nm, then becomes constant below 3 nm. Both of these features can be quantitatively explained by percolation on a finite lattice. The effective defect “size” of about 3 nm is obtained from the thickness dependence of the breakdown distributions. The model predicts a singular behavior when the oxide thickness becomes less than the defect size, because in this limit a single defect near the center of the oxide is sufficient to crea...read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Review on high-k dielectrics reliability issues
G. Ribes,J. Mitard,M. Denais,Sylvie Bruyere,Frederic Monsieur,Chittoor Parthasarathy,Emmanuel Vincent,Gerard Ghibaudo +7 more
TL;DR: In this article, the authors review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results, showing that the reliability of Hf-based materials is influenced both by the interfacial layer as well as the high k layer.
Journal ArticleDOI
Dielectric breakdown mechanisms in gate oxides
TL;DR: In this paper, the authors focus on the case of gate dielectrics of interest for current Si microelectronics, i.e., Si oxides or oxynitrides of thickness ranging from some tens of nanometers down to about 1nm.
Journal ArticleDOI
Resistive switching phenomena: A review of statistical physics approaches
TL;DR: In this paper, the authors provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field, and discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS.
References
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Book
Introduction to percolation theory
Dietrich Stauffer,Amnon Aharony +1 more
TL;DR: In this paper, a scaling solution for the Bethe lattice is proposed for cluster numbers and a scaling assumption for cluster number scaling assumptions for cluster radius and fractal dimension is proposed.
Journal ArticleDOI
Fractal Dimension of Dielectric Breakdown
TL;DR: In this article, it was shown that the simplest nontrivial stochastic model for dielectric breakdown naturally leads to fractal structures for the discharge pattern, and the results were compared with properly designed experiments.
Journal ArticleDOI
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
TL;DR: In this article, two mechanisms triggered by electron heating in the oxide conduction band are discussed: trap creation and band gap ionization by carriers with energies exceeding 2 and 9 eV, respectively.
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