F
Frederic Monsieur
Researcher at STMicroelectronics
Publications - 78
Citations - 1907
Frederic Monsieur is an academic researcher from STMicroelectronics. The author has contributed to research in topics: CMOS & Capacitor. The author has an hindex of 16, co-authored 75 publications receiving 1784 citations. Previous affiliations of Frederic Monsieur include École nationale supérieure d'électronique et de radioélectricité de Grenoble.
Papers
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Journal ArticleDOI
Review on high-k dielectrics reliability issues
G. Ribes,J. Mitard,M. Denais,Sylvie Bruyere,Frederic Monsieur,Chittoor Parthasarathy,Emmanuel Vincent,Gerard Ghibaudo +7 more
TL;DR: In this article, the authors review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results, showing that the reliability of Hf-based materials is influenced both by the interfacial layer as well as the high k layer.
Proceedings ArticleDOI
28nm FDSOI technology platform for high-speed low-voltage digital applications
Nicolas Planes,Olivier Weber,V. Barral,Sebastien Haendler,D. Noblet,D. Croain,M. Bocat,P.O. Sassoulas,Xavier Federspiel,Antoine Cros,A. Bajolet,E. Richard,B. Dumont,Pierre Perreau,David Petit,Dominique Golanski,Claire Fenouillet-Beranger,N. Guillot,Mustapha Rafik,Vincent Huard,S. Puget,X. Montagner,M-A. Jaud,O. Rozeau,O. Saxod,Francois Wacquant,Frederic Monsieur,D. Barge,L. Pinzelli,M. Mellier,Frederic Boeuf,Franck Arnaud,Michel Haond +32 more
TL;DR: This work demonstrates 32% and 84% speed boost at 1.0V and 0.6V respectively, without adding process complexity compared to standard bulk technology, to show how memory access time can be significantly reduced thanks to high Iread, by keeping competitive leakage values.
Proceedings ArticleDOI
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
Frederic Monsieur,Emmanuel Vincent,David Roy,Sylvie Bruyere,J.C. Vildeuil,G. Pananakakis,Gerard Ghibaudo +6 more
TL;DR: In this paper, a close investigation of the gate oxide failure for thickness below 24/spl Aring was provided, and the wear-out beginning at the failure occurrence was studied.
Proceedings ArticleDOI
Fundamental aspects of HfO 2 -based high-k metal gate stack reliability and implications on t inv -scaling
Eduard A. Cartier,Andreas Kerber,Takashi Ando,Martin M. Frank,Kisik Choi,Siddarth A. Krishnan,Barry Linder,Kai Zhao,Frederic Monsieur,James H. Stathis,Vijay Narayanan +10 more
TL;DR: In this paper, a case is made that these observed trends arise from the layer structure and the materials properties of the SiO(N)/HfO 2 dual dielectric.
Proceedings ArticleDOI
14nm FDSOI technology for high speed and energy efficient applications
Olivier Weber,Emmanuel Josse,Francois Andrieu,Antoine Cros,Evelyne Richard,P. Perreau,E. Baylac,N. Degors,C. Gallon,Eric Perrin,S. Chhun,E. Petitprez,S. Delmedico,Jerome Simon,G. Druais,S. Lasserre,J. Mazurier,N. Guillot,E. Bernard,R. Bianchini,L. Parmigiani,X. Gerard,Clement Pribat,Olivier Gourhant,F. Abbate,C. Gaumer,V. Beugin,Pascal Gouraud,P. Maury,S. Lagrasta,D. Barge,Nicolas Loubet,Remi Beneyton,Daniel Benoit,S. Zoll,J.-D. Chapon,L. Babaud,M. Bidaud,Magali Gregoire,C. Monget,B. Le-Gratiet,P. Brun,M. Mellier,A. Pofelski,L. Clément,R. Bingert,S. Puget,J.-F. Kruck,D. Hoguet,Patrick Scheer,Thierry Poiroux,J.-P. Manceau,Mustapha Rafik,Denis Rideau,Marie-Anne Jaud,J. Lacord,Frederic Monsieur,L. Grenouillet,M. Vinet,Quanwei Liu,Bruce B. Doris,M. Celik,S.P. Fetterolf,O. Faynot,Michel Haond +64 more
TL;DR: A 14nm technology designed for high speed and energy efficient applications using strain-engineered FDSOI transistors using forward back bias is presented and it is experimentally demonstrated that the power efficiency of this technology provides an additional 40% dynamic power reduction for ring oscillators working at the same speed.