Journal ArticleDOI
Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base
TLDR
In this article, the performance of a MQW Heterojunction Bipolar Transistor Laser (HBTL) has been studied using GeSn alloy and both symmetric and asymmetric quantum wells have been considered.Abstract:
The performance of a Multiple Quantum Well (MQW) Heterojunction Bipolar Transistor Laser (HBTL) has been studied using GeSn alloy. Both symmetric and asymmetric quantum wells have been considered. Main analysis is focused on finding the minority carrier concentration in the base, the base threshold current, light output power of the device and the values are compared with GeSn based Single Quantum Well and InGaAs based Multiple Quantum Well Transistor Laser.read more
Citations
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Journal ArticleDOI
Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications.
Soumava Ghosh,Kuan-Chih Lin,Cheng-Hsun Tsai,Harshvardhan Kumar,Qimiao Chen,Lin Zhang,Bongkwon Son,Chuan Seng Tan,Munho Kim,Bratati Mukhopadhyay,Guo-En Chang +10 more
TL;DR: The design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits are presented and it is shown that the spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency.
Journal ArticleDOI
Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity
TL;DR: In this paper, an optimization approach was applied to achieve low dark current along with high responsivity for a GeSn/SiGeSn QWIP, which achieved a low current of 2.35 pA with a peak responsivity of 1.24 A/W at 4.3 µm and a high detectivity of 3.47 µm at 2 µm.
Journal ArticleDOI
SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review
Oluwatobi Olorunsola,Abdulla Said,Solomon Gboyega Ojo,Hryhorii V. Stanchu,Grey Abernathy,Sylvester Amoah,Samir K. Saha,Emmanuel Wangila,Joshua M. Grant,Sudip Acharya,Lucas Miller,Kyle Rosler,Yue-Tong Jheng,Guo-En Chang,Baohua Li,Gregory J. Salamo,Shui-Qing Yu,Wei Dou +17 more
TL;DR: In this paper , the authors summarize the recent progress on development of SiGeSn QWs, including the fundamental optical and transition studies and optoelectronic device applications, and reveal the possibility of all-group-IV PICs with photonics and electronics monolithically integrated on a single-chip.
References
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Journal ArticleDOI
Theoretical calculations of heterojunction discontinuities in the Si/Ge system.
TL;DR: A theoretical study of the structural and electronic properties of pseudomorphic Si/Ge interfaces, in which the layers are strained such that the lattice spacing parallel to the interface is equal on both sides.
Journal ArticleDOI
Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Gain and intervalence band absorption in quantum-well lasers
TL;DR: In this article, the authors analyzed the electronic dipole moment in quantum-well structures and derived the linear gain taking into account the intraband relaxation, and showed that the effects of the intrusion relaxation are 1) shift of the gain peak toward shorter wavelength with increasing injected carrier density even in quantum well structures, 2) increase of gain spectrum width due to softening of the profile, and 3) reduction in the maximum gain by 30-40 percent.
Journal ArticleDOI
Ge–Sn semiconductors for band-gap and lattice engineering
M. Bauer,M. Bauer,J. Taraci,J. Taraci,J. Tolle,J. Tolle,Andrew Chizmeshya,Stefan Zollner,Stefan Zollner,David J. Smith,Jose Menendez,Changwu Hu,Changwu Hu,John Kouvetakis +13 more
TL;DR: In this paper, a class of Si-based semiconductors in the Ge1−xSnx system is described, which is completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry.
Journal ArticleDOI
The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications
TL;DR: In this paper, the direct (Γ) and indirect bandgaps of unstrained crystalline SixGe1−x−ySny have been calculated over the entire xy composition range.