Journal ArticleDOI
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
Philippe Vennéguès,M. Benaissa,Bernard Beaumont,Eric Feltin,P. de Mierry,S. Dalmasso,Mathieu Leroux,Pierre Gibart +7 more
TLDR
In this paper, a transmission electron microscopy study of structural defects induced by the introduction of Mg during the growth of metalorganic vapor phase epitaxy GaN is presented, where the defects are assumed to be pyramidal inversion domains with an hexagonal base and {1123} inclined facets.Abstract:
A transmission electron microscopy study of structural defects induced by the introduction of Mg during the growth of metalorganic vapor phase epitaxy GaN is presented. These defects are assumed to be pyramidal inversion domains with an hexagonal base and {1123} inclined facets. The tip of the pyramids is always pointing toward the [0001] direction, i.e., in a Ga-terminated film, toward the substrate and in a N-terminated film, toward the surface. A chemical quantitative analysis shows that these pyramidal defects are Mg rich. They are present in all the studied films, independent of the doping level.read more
Citations
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Journal ArticleDOI
Luminescence properties of defects in GaN
TL;DR: In this paper, the structural and point defects caused by lattice and stacking mismatch with substrates are discussed. But even the best of the three binaries, InN, AIN and AIN as well as their ternary compounds, contain many structural defects, and these defects notably affect the electrical and optical properties of the host material.
Journal ArticleDOI
Synthesis and Applications of III-V Nanowires
TL;DR: The way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires is reviewed, and one of how the different families ofnanowires can contribute to applications is combined.
Journal ArticleDOI
Faceted inversion domain boundary in GaN films doped with Mg
TL;DR: In this paper, the inversion domain boundary is faceted predominantly along the {0001} and {h,h,−2h,l} planes, with l/h approximately equal to 3.
Journal ArticleDOI
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
Jesús Zúñiga-Pérez,Vincent Consonni,Liverios Lymperakis,Xiang Kong,Achim Trampert,Sergio Fernández-Garrido,Oliver Brandt,Hubert Renevier,Stacia Keller,Karine Hestroffer,Markus R. Wagner,Juan Sebastián Reparaz,Fatih Akyol,Siddharth Rajan,Stephanie Rennesson,Tomas Palacios,Guy Feuillet +16 more
TL;DR: In this paper, a review of polarity-related issues in GaN and ZnO is presented, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth.
Journal ArticleDOI
Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.
James R. Riley,Sonal Padalkar,Qiming Li,Ping Lu,Daniel D. Koleske,Jonathan J. Wierer,George T. Wang,Lincoln J. Lauhon +7 more
TL;DR: Tomographic analysis of the In distribution, interface morphology, and dopant clustering of InGaN/GaN multiquantum wells in LEDs reveals material quality comparable to that of planar LED QWs.
References
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Book
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
TL;DR: In this article, the efficient room-temperature photoluminescence bands of wurtzite GaN, which are peaked in the red (1.8 eV), the yellow (2.2 eV) and the blue spectral range, have been studied as a function of doping (species and concentration) and excitation power density (PD).
Journal ArticleDOI
Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
TL;DR: In this paper, the blue and ultraviolet photoluminescence bands in Mg-doped GaN have been investigated over a wide range of temperatures and excitation intensities.
Journal ArticleDOI
Inversion of wurtzite GaN(0001) by exposure to magnesium
V. Ramachandran,Randall M. Feenstra,Wendy L. Sarney,Lourdes Salamanca-Riba,John E. Northrup,L. T. Romano,David W. Greve +6 more
TL;DR: Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polic face, and a structural model is presented for the inversion.
Journal ArticleDOI
Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
TL;DR: In this article, a transmission electron microscopy study of defect reduction mechanisms for defect densities in epitaxial lateral overgrown (ELO) GaN films is presented in the standard one-step ELO, where the propagation of defects under the mask is blocked, whereas the defects in the window regions thread up to the surface.