Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
Dmitry Yu. Usachov,V. K. Adamchuk,Danny Haberer,Alexander Grüneis,Hermann Sachdev,Alexei Preobrajenski,Clemens Laubschat,Denis V. Vyalikh +7 more
TLDR
In this article, a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface.Abstract:
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene. (Less)read more
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Advances in 2D boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene
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Tunable band gaps in bilayer graphene-BN heterostructures
TL;DR: The calculations suggest that graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.