Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.
TLDR
The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field, which provides a facile way to obtain metal oxide nanowires-based ReRAM device in the future.Abstract:
The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.read more
Citations
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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
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References
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Oriented hierarchical single crystalline anatase TiO2 nanowire arrays on Ti-foil substrate for efficient flexible dye-sensitized solar cells
TL;DR: In this paper, anatase TiO2 nanowire (HNW) arrays were synthesized on a Ti-foil substrate via a two-step hydrothermal growth process.
Journal ArticleDOI
TiO2?a prototypical memristive material
Krzysztof Szot,M. Rogala,M. Rogala,Wolfgang Speier,Zbigniew Klusek,Astrid Besmehn,Rainer Waser,Rainer Waser +7 more
TL;DR: This work describes the (tiny) stoichiometrical range for TiO(2 - x) as a homogeneous compound, the aggregation of point defects into extended defects, and the formation of the various Magnéli phases, and concludes concerning the relevant parameters that need to be controlled in order to tailor the memristive properties.
Journal ArticleDOI
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
TL;DR: In this paper, the stable bipolar resistive switching in metal/a-TiO2/metal RRAM devices is attributed to both interface domains: the top interface domain with mobile oxygen ions and the bottom interface domain for its protection against an electrical breakdown.
Journal ArticleDOI
Oriented single crystalline titanium dioxide nanowires
TL;DR: The single crystal TiO(2) nanowire arrays on flexible titanium substrate may be used in photocatalytic and photovoltaic devices such as dye-sensitized solar cells and may enhance their performance by providing fast electron transport.
Journal ArticleDOI
Metal/TiO2 interfaces for memristive switches
Jianhua Yang,John Paul Strachan,Feng Miao,M.-X. Zhang,Matthew D. Pickett,Wei Yi,Douglas A. A. Ohlberg,Gilberto Medeiros-Ribeiro,R. Stanley Williams +8 more
TL;DR: In this paper, the work function of the metal electrode has a surprisingly minor effect in determining the electronic barrier at the interface between metal electrodes and the oxide in TiO2-based memristive switches.