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Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.

TLDR
The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field, which provides a facile way to obtain metal oxide nanowires-based ReRAM device in the future.
Abstract
The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.

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Reliable and Low-Power Multilevel Resistive Switching in TiO2 Nanorod Arrays Structured with a TiOx Seed Layer.

TL;DR: The formation of a seed layer on the fluorine-doped tin oxide (FTO) glass substrate after treatment in TiCl4 solution, before the growth of TiO2 NRAs on the FTO substrate via a hydrothermal process, is shown to significantly improve the resistive switching performance of the resultingTiO2 NRA-based device.
Journal ArticleDOI

Intelligent multiple-liquid evaporation power generation platform using distinctive Jaboticaba-like carbon nanosphere@TiO2 nanowires

TL;DR: In this paper, a self-powered device concept that exploits a type of Jaboticaba-like carbon nanosphere@TiO2 nanowire (C@T) as a highly efficient, light-sensitive liquid (including but not limited to water, methanol, acetone, and ethanol) was introduced.
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Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO2 memristor

TL;DR: In this paper, a titanium dioxide (TiO2) based memristor was fabricated using radio frequency (RF) reactive sputtering and its resistive switching characteristics and carrier transport mechanisms were investigated.
Journal ArticleDOI

Carbon nanowalls: A new material for resistive switching memory devices

TL;DR: In this paper, the resistive switching behavior of a new type of device made of carbon nanowalls (CNWs) deposited on fluorine-doped tin oxide (FTO) substrate was reported.
References
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Journal ArticleDOI

Oriented hierarchical single crystalline anatase TiO2 nanowire arrays on Ti-foil substrate for efficient flexible dye-sensitized solar cells

TL;DR: In this paper, anatase TiO2 nanowire (HNW) arrays were synthesized on a Ti-foil substrate via a two-step hydrothermal growth process.
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TiO2?a prototypical memristive material

TL;DR: This work describes the (tiny) stoichiometrical range for TiO(2 - x) as a homogeneous compound, the aggregation of point defects into extended defects, and the formation of the various Magnéli phases, and concludes concerning the relevant parameters that need to be controlled in order to tailor the memristive properties.
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Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

TL;DR: In this paper, the stable bipolar resistive switching in metal/a-TiO2/metal RRAM devices is attributed to both interface domains: the top interface domain with mobile oxygen ions and the bottom interface domain for its protection against an electrical breakdown.
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Oriented single crystalline titanium dioxide nanowires

TL;DR: The single crystal TiO(2) nanowire arrays on flexible titanium substrate may be used in photocatalytic and photovoltaic devices such as dye-sensitized solar cells and may enhance their performance by providing fast electron transport.
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Metal/TiO2 interfaces for memristive switches

TL;DR: In this paper, the work function of the metal electrode has a surprisingly minor effect in determining the electronic barrier at the interface between metal electrodes and the oxide in TiO2-based memristive switches.
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