Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.
TLDR
The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field, which provides a facile way to obtain metal oxide nanowires-based ReRAM device in the future.Abstract:
The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.read more
Citations
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Unraveling the Effect of the Water Content in the Electrolyte on the Resistive Switching Properties of Self-Assembled One-Dimensional Anodized TiO2 Nanotubes.
TL;DR: In this paper , the effect of water content on resistive switching properties of Ti foils was investigated by anodizing the foils and varying the water content in an electrolyte (1-10 vol %).
Journal ArticleDOI
Laser-induced crystalline phase transition from rutile to anatase of niobium doped TiO2
Edvins Dauksta,Arturs Medvids,Pavels Onufrijevs,Masaru Shimomura,Yasuo Fukuda,Kenji Murakami +5 more
TL;DR: In this paper, the laser-induced crystalline phase transition of niobium doped TiO2 single crystal was investigated by using Raman spectroscopy and electron backscatter diffraction before and after irradiation by 266nm/ns laser at the threshold intensity of 56MW/cm2.
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Ni/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties
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Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure
TL;DR: In this article, a novel Ni/SiOx/W 2'×'2'μm2 cross-point resistive random access memory (RRAM) structure was proposed for bipolar resistive switching.
References
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