Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.
TLDR
The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field, which provides a facile way to obtain metal oxide nanowires-based ReRAM device in the future.Abstract:
The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.read more
Citations
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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
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Reliable and Low-Power Multilevel Resistive Switching in TiO2 Nanorod Arrays Structured with a TiOx Seed Layer.
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Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO2 memristor
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TL;DR: The tuning of the switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer is proposed, and a complementary resistive switching (CRS) behavior is found, which can effectively settle the sneak-path issue.
Journal ArticleDOI
Spatial nonuniformity in resistive-switching memory effects of NiO.
Keisuke Oka,Takeshi Yanagida,Kazuki Nagashima,Masaki Kanai,Tomoji Kawai,Tomoji Kawai,Jin-Soo Kim,Bae Ho Park +7 more
TL;DR: It is successfully identified that the bipolar RS in NiO occurs near the cathode rather than the anode, which can be interpreted in terms of an electrochemical redox model based on ion migration and p-type conduction.
Journal ArticleDOI
Effect of electrode type in the resistive switching behaviour of TiO 2 thin films
E. Hernández-Rodríguez,A. Márquez-Herrera,E Zaleta-Alejandre,M. Meléndez-Lira,W. de la Cruz,M. Zapata-Torres +5 more
TL;DR: In this paper, the influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO2-based metal?oxide?metal devices (MOM) is studied.
Journal ArticleDOI
Flexible resistive switching memory with a Ni/CuO x /Ni structure using an electrochemical deposition process.
Kyuhyun Park,Jang-Sik Lee +1 more
TL;DR: The processes for fabrication of flexible ReRAM devices were based on simple-solution, bottom-up growth and they can be performed at low temperatures and could be a viable solution for fabricating flexible non-volatile memory devices in the future.