Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.
TLDR
The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field, which provides a facile way to obtain metal oxide nanowires-based ReRAM device in the future.Abstract:
The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.read more
Citations
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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
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Reliable and Low-Power Multilevel Resistive Switching in TiO2 Nanorod Arrays Structured with a TiOx Seed Layer.
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TL;DR: In this paper, a self-powered device concept that exploits a type of Jaboticaba-like carbon nanosphere@TiO2 nanowire (C@T) as a highly efficient, light-sensitive liquid (including but not limited to water, methanol, acetone, and ethanol) was introduced.
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Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO2 memristor
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Carbon nanowalls: A new material for resistive switching memory devices
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References
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Realization of rectifying and resistive switching behaviors of TiO2 nanorod arrays for nonvolatile memory
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Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film
TL;DR: In this paper, the effect of the chemical composition of TiO2 in the metal/TiO2/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials.
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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
TL;DR: Good device-to-device uniformity with a yield of >85 % has been clarified by weibull distribution owing to higher slope/shape factor and the switching mechanism is based on oxygen vacancy migration from the CrOx layer and filament formation/rupture in the TiOx layer.
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Probing electron density across Ar+ irradiation-induced self-organized TiO2−x nanochannels for memory application
A. Barman,C. P. Saini,Pranab Kumar Sarkar,Asim Roy,Biswarup Satpati,D. Kanjilal,Sajal K. Ghosh,Sankar Dhar,Aloke Kanjilal +8 more
TL;DR: In this article, the variation of electron density in TiO2−x nanochannels, exhibiting resistive switching phenomenon, produced by Ar+ ion-irradiation at the threshold fluence of 5'×'1016'ions/cm2 is demonstrated by X-ray reflectivity (XRR).
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Reproducible resistive switching in hydrothermal processed TiO2 nanorod film for non-volatile memory applications
TL;DR: In this paper, the authors examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM), which was grown on FTO substrate by simple hydrothermal process.