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Open AccessJournal ArticleDOI

Shot noise in mesoscopic conductors

Yaroslav M. Blanter, +1 more
- 01 Sep 2000 - 
- Vol. 336, Iss: 1, pp 1-166
TLDR
Theoretical and experimental work concerned with dynamic fluctuations has developed into a very active and fascinating subfield of mesoscopic physics as discussed by the authors, which can be used to obtain information on a system which is not available through conductance measurements.
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This article is published in Physics Reports.The article was published on 2000-09-01 and is currently open access. It has received 2086 citations till now. The article focuses on the topics: Shot noise & Quantum noise.

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Citations
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Journal ArticleDOI

What can we learn from noise? - Mesoscopic nonequilibrium statistical physics.

TL;DR: The significance of fluctuation, or equivalently noise, as noise measurement enables us to address the fundamental aspects of a physical system, and what information can be deduced from the current noise measurement in mesoscopic systems is explained.
Journal ArticleDOI

Asymptotics of Selberg-like integrals: The unitary case and Newton's interpolation formula

TL;DR: In this article, the authors investigated the asymptotic behavior of the Selberg-like integral in the random matrix theory of electronic scattering in chaotic cavities supporting $N$ channels in the two attached leads.
Journal ArticleDOI

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

TL;DR: This work focuses on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.
Journal ArticleDOI

Fast Evaluation of the High-Frequency Channel Noise in Nanoscale MOSFETs

TL;DR: In this paper, an analytical model using the suppression factor for fast evaluation of the high-frequency channel noise in nanoscale MOSFETs for radio frequency and mixed-signal applications is proposed.
Journal ArticleDOI

Spin Fluctuations in Quantized Transport of Magnetic Topological Insulators.

TL;DR: It is shown that considering the exchange gaps at the mean-field level is inadequate to predict phase transitions between electronic states of distinct topology, and this effect, which has hitherto been overlooked, provides an alternative explanation of recent experiments on magnetic topological insulators.
References
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Book

Stochastic processes in physics and chemistry

TL;DR: In this article, the authors introduce the Fokker-planck equation, the Langevin approach, and the diffusion type of the master equation, as well as the statistics of jump events.

Stochastic Processes in Physics and Chemistry

Abstract: Preface to the first edition. Preface to the second edition. Abbreviated references. I. Stochastic variables. II. Random events. III. Stochastic processes. IV. Markov processes. V. The master equation. VI. One-step processes. VII. Chemical reactions. VIII. The Fokker-Planck equation. IX. The Langevin approach. X. The expansion of the master equation. XI. The diffusion type. XII. First-passage problems. XIII. Unstable systems. XIV. Fluctuations in continuous systems. XV. The statistics of jump events. XVI. Stochastic differential equations. XVII. Stochastic behavior of quantum systems.
Journal ArticleDOI

Transition from metallic to tunneling regimes in superconducting microconstrictions: Excess current, charge imbalance, and supercurrent conversion

TL;DR: In this paper, the Bogoliubov equations were used to model the transmission and reflection of particles at the tunnel junction of normal-superconducting micro-constriction contacts, and a simple theory for the $I\ensuremath{-}V$ curves of normal superconducting contacts was proposed to describe the crossover from metallic to tunnel junction behavior.
Journal ArticleDOI

Quantized conductance of point contacts in a two-dimensional electron gas.

TL;DR: The first expenmental study of the resistance of ballistic pomt contacts m the 2DEG of high-mobihty GaAs-AlGaAs heterostructures is reported.
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