Shot noise in mesoscopic conductors
TLDR
Theoretical and experimental work concerned with dynamic fluctuations has developed into a very active and fascinating subfield of mesoscopic physics as discussed by the authors, which can be used to obtain information on a system which is not available through conductance measurements.About:
This article is published in Physics Reports.The article was published on 2000-09-01 and is currently open access. It has received 2086 citations till now. The article focuses on the topics: Shot noise & Quantum noise.read more
Citations
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Leggett-Garg inequality in electron interferometers
TL;DR: In this paper, the violation of the Leggett-Garg inequality in electronic Mach-Zehnder inteferometers is considered and two concrete realizations of these ideas are discussed: the first in quantum Hall edge channels, the second in a double quantum dot interferometer.
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Local temperature of out-of-equilibrium quantum electron systems
TL;DR: In this paper, the local temperature of an out-of-equilibrium, quantum electron system can be consistently defined with the help of an external voltage and temperature probe, and sufficient conditions under which the temperature measured by the probe is independent of details of the system-probe coupling, is equal to the temperature obtained from an independent current-noise measurement, satisfies the transitivity condition expressed by the zeroth law of thermodynamics, and is consistent with Carnot's theorem.
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Noise characteristics of charge tunneling via localized states in metal--molecule--metal junctions
TL;DR: The noise characteristics of charge transport through an alkyl-based metal--molecule--metal junction will be useful in evaluating the influences of localized states on charge transport in molecular or other electronic junctions.
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Shot noise in self-assembled InAs quantum dots
TL;DR: In this paper, the authors investigated the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime.
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Hanbury Brown-Twiss interference of anyons.
Gabriele Campagnano,Oded Zilberberg,Igor V. Gornyi,Dmitri E. Feldman,Andrew C. Potter,Yuval Gefen +5 more
TL;DR: In this article, a Hanbury Brown-Twiss cross correlation of Abelian Laughlin anyons is calculated, and the correlations exhibit partial bunching similar to bosons, indicating a substantial statistical transmutation from the underlying electronic degrees of freedom.
References
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Book
Stochastic processes in physics and chemistry
TL;DR: In this article, the authors introduce the Fokker-planck equation, the Langevin approach, and the diffusion type of the master equation, as well as the statistics of jump events.
Stochastic Processes in Physics and Chemistry
Abstract: Preface to the first edition. Preface to the second edition. Abbreviated references. I. Stochastic variables. II. Random events. III. Stochastic processes. IV. Markov processes. V. The master equation. VI. One-step processes. VII. Chemical reactions. VIII. The Fokker-Planck equation. IX. The Langevin approach. X. The expansion of the master equation. XI. The diffusion type. XII. First-passage problems. XIII. Unstable systems. XIV. Fluctuations in continuous systems. XV. The statistics of jump events. XVI. Stochastic differential equations. XVII. Stochastic behavior of quantum systems.
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Transition from metallic to tunneling regimes in superconducting microconstrictions: Excess current, charge imbalance, and supercurrent conversion
TL;DR: In this paper, the Bogoliubov equations were used to model the transmission and reflection of particles at the tunnel junction of normal-superconducting micro-constriction contacts, and a simple theory for the $I\ensuremath{-}V$ curves of normal superconducting contacts was proposed to describe the crossover from metallic to tunnel junction behavior.
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Quantized conductance of point contacts in a two-dimensional electron gas.
van Bart Wees,H. van Houten,C. W. J. Beenakker,J.G. Williamson,Leo P. Kouwenhoven,D. van der Marel,C. T. Foxon +6 more
TL;DR: The first expenmental study of the resistance of ballistic pomt contacts m the 2DEG of high-mobihty GaAs-AlGaAs heterostructures is reported.