scispace - formally typeset
Open AccessJournal Article

Silicon as a mechanical material

Kurt E. Petersen
- 01 Jan 1999 - 
- Vol. 153, pp 3-40
Reads0
Chats0
TLDR
In this article, the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures are discussed.
Abstract
Single-crystal silicon is being increasingly employed in a variety of new commercial products not because of its well-established electronic properties, but rather because of its excellent mechanical properties. In addition, recent trends in the engineering literature indicate a growing interest in the use of silicon as a mechanical material with the ultimate goal of developing a broad range of inexpensive, batch-fabricated, high-performance sensors and transducers which are easily interfaced with the rapidly proliferating microprocessor. This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures. Finally, the potentials of this new technology are illustrated by numerous detailed examples from the literature. It is clear that silicon will continue to be aggressively exploited in a wide variety of mechanical applications complementary to its traditional role as an electronic material. Furthermore, these multidisciplinary uses of silicon will significantly alter the way we think about all types of miniature mechanical devices and components.

read more

Content maybe subject to copyright    Report

Citations
More filters
Journal ArticleDOI

Dielectric response of ferroelectric thin films on non-metallic electrodes

TL;DR: In this paper, the dielectric response of thin perovskite ferroelectrics fabricated on electrodes such as indium tin oxide is calculated as a function of frequency, film & barrier layer thickness, and dielectrics constant using an equivalent circuit model based on properties of the bulk, the electrode and a series resistance.
Journal ArticleDOI

Surface micromachined pressure sensors with integrated CMOS read-out electronics

TL;DR: In this paper, a single chip pressure and tenperature sensor system with on chip electronics is presented, where the capacitive pressure sensor is fabricated using a CMOS process with additional surface micromachining steps to form a membranes.
Journal ArticleDOI

Fabrication and characteristics of an implantable, polymer-based, intrafascicular electrode.

TL;DR: The manufacturing changes described in this study enable the construction of more mechanically robust polyLIFEs, which should provide greater success when chronically implanted in peripheral nerves.
Journal ArticleDOI

Applications of Microelectromechanical Systems in Industrial Processes and Services

TL;DR: A historical perspective of the origin and development of MEMS is presented, as well as the traditional and innovative fabrication techniques, and several of the most important applications of microsystems in the manufacturing and production sectors are described.
Journal ArticleDOI

Measurements of residual stresses in thin films using micro-rotating-structures

TL;DR: In this article, micro-rotating-structures for local measurements of residual stresses in a thin film were simulated by the finite element method (FEM), and a sensitivity factor -the ratio of the deflection of the micro-structure to the normalized residual stress was introduced and tabulated from the FEM results.
References
More filters
Journal ArticleDOI

High-performance heat sinking for VLSI

TL;DR: In this paper, a water-cooled integral heat sink for silicon integrated circuits has been designed and tested at a power density of 790 W/cm2, with a maximum substrate temperature rise of 71°C above the input water temperature.
Book

Formulas for Stress and Strain

TL;DR: In this article, the authors propose formulas for stress and strain in the form of formulas for strain and stress, which are derived from the formula for stress-and-stress and strain.
Journal ArticleDOI

A gas chromatographic air analyzer fabricated on a silicon wafer

TL;DR: In this article, a miniature gas analysis system based on the principles of gas chromatography (GC) has been built in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments.
Journal ArticleDOI

The resonant gate transistor

TL;DR: In this paper, the resonant gate transistor (RGT) is described as an electrostatically excited tuning fork employing field effect transistor readout, which can be batch-fabricated in a manner consistent with silicon technology.
Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Related Papers (5)