Silicon waveguided components for the long-wave infrared region*

TLDR: In this article, the Si rib-membrane waveguide offers low-loss transmission from 12 t o6 µ m to 2 4t o 100 µm, which is compatible with Si microelectronics manufacturing, by etching away the oxide locally beneath the rib and employing a crystal Ge rib grown directly upon the Si substrate.

Abstract: We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 155 µ mt elecom range into the wide infrared from 155 to 100 µm The Si rib-membrane waveguide offers low-loss transmission from 12 t o6 µ ma nd from 2 4t o 100µm This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib Alternatively, low-loss waveguiding from 19 to 147 µ mi s assured by employing a crystal Ge rib grown directly upon the Si substrate The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon’s 6–24 µ mm ulti-phonon absorption Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings The hollow channel offers less than 1 7d B cm −1 loss from 12 to 100 µm