Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling
TL;DR: In this paper, the authors used ion-stimulated surface segregation to increase the depth resolution of Auger profiling during analysis of the Inx Ga1 − xAs/GaAs heterostructures.
Journal ArticleDOI
Deconvolution models for determining the real surface composition of InP (1 0 0) after bombardment with 5 keV Ar ions at different angles
R.Q. Odendaal,Johan B. Malherbe +1 more
TL;DR: In this article, two deconvolution models were used to determine concentration vs depth distributions from the Auger electron spectroscopy (AES) intensities, which were then used to calculate a surface concentration for each case.
Journal ArticleDOI
Influence of temperature and sputter source on Cu(In,Ga)Se2 SIMS depth profiles
TL;DR: In this article , the effect of the ion sources on the sputter craters and the resulting measurement of CIGS absorber was investigated. But the authors focused on the morphology of sputter crater.
Journal ArticleDOI
Variations in composition and structure occurring in multicomponent alloy targets during their service term
L. R. Shaginyan,M. I. Mironov,S.A. Firstov,Nicolay A. Krapivka,Valery V. Kremetsky,Viktor N. Novichenko +5 more
TL;DR: In this article, the authors used SEM and microanalysis to study the structure and composition of the grooves of high entropy alloy targets at the beginning and at the end of their service, and found that the formation of specific microrelief on the targets surfaces upon ion bombardment with ions with energy typical for DC MS is a result of the combined action of high temperature and sputtering.
Proceedings ArticleDOI
Scanning force microscopic investigations of the femtosecond pulse laser ablation of indium phosphide in air
TL;DR: In this paper, a femtosecond-pulses were used for ablation of single-crystalline indium phosphide (InP) in air by means of linearly polarized Ti:sapphire femTosecond pulses (800 nm, 130 fs, 10 Hz).
References
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Book
Practical surface analysis: By auger and x-ray photoelectron spectroscopy
David Briggs,M. P. Seah +1 more
Journal ArticleDOI
Theory of ripple topography induced by ion bombardment
TL;DR: In this paper, a theory explaining the origin of ripple topography is presented, which shows that the ripple wave vector is parallel to the surface component of the beam direction, provided that longitudinal straggling of the beacon is not too large.