Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
More filters
Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
More filters
Journal ArticleDOI
Depth resolution in Auger depth profile analysis of aluminum metallization in microelectronics: The effect of crystalline texture
TL;DR: In this article, the effect of ion channeling on the sputtering yield of aluminum alloys was investigated, resulting in an orientation-dependent sputter rate of individual crystallites, and the dependence of depth resolution on ion impact angle, ion species and ion energy can be explained qualitatively by Onderdelinden's theory of single-crystalline sputtering.
Journal ArticleDOI
Ion‐bombardment‐induced whisker formation on graphite
TL;DR: In this paper, the formation of graphite whiskers under ion bombardment has been studied and it is shown that the growth rate of the whiskers grows parallel to the ion beam.
Journal ArticleDOI
Damage and aluminum distributions in sic during ion implantation and annealing
TL;DR: In this article, damage buildup in SiC during ion implantation of Al + with an energy of 90 keV and flucnces of 10 13 −10 16 ions/cm 2 at room temperature was studied.
Journal ArticleDOI
XPS data for sputter-cleaned In0.53Ga0.47As, GaAs, and InAs surfaces
TL;DR: In this paper, core level binding energies and Auger parameters were determined for In, Ga, and As in the three compounds In0.53Ga0.47As, GaAs, and InAs.
Journal ArticleDOI
Preferential sputtering of InP: an AES investigation
Johan B. Malherbe,W.O. Barnard +1 more
TL;DR: In this article, the surface composition of InP was determined by a Monte Carlo analysis using the TRIM-89 computer code, and it was shown that the mass difference between the In and P atoms is the major factor contributing to the preferential sputtering, with surface binding energies of secondary importance.