Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
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McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
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Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
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Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
Deep p-n junction in Hg1-xCdxTe created by ion milling
TL;DR: In this article, a model for the p-n conversion during ion milling is discussed and the electron concentration in the n-type layer is of the order of 1015 cm-3 and is nearly constant from the surface to the p n junction.
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Range parameters of heavy ions in amorphous targets at LSS-energies of 0.0006⩽ ϵ ⩽ 0.3
TL;DR: In this article, heavy ions of various elements have been implanted into amorphous silicon, germanium and aluminum layers at energies of 1-60 keV, and high resolution ion backscattering has been used to determine range parameters and nuclear stopping powers.
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Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range Influence of Bombarding Energy and Sample Temperature on Damage and Incorporation
TL;DR: Etude de l'introduction des ions utilises for l'irradiation and du desordre induit par l'IRradiation par retrodiffusion Rutherford and canalisation as discussed by the authors.
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An STM study of the InSb(100)-c(8 × 2) surface
TL;DR: Atomic resolution scanning tunneling microscopy (STM) images of InSb(100) prepared by in situ treatment of several cycles of low energy argon ion bombardment and annealing have been obtained as discussed by the authors.