Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
More filters
Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
More filters
Journal ArticleDOI
LEED and AES of stoichiometric and arsenic-rich GaAs(110) surfaces prepared by molecular beam epitaxy
TL;DR: In this article, the surface of the GaAs(110) surface was studied by LEED intensity measurements and Auger electron spectroscopy and the surface was prepared by ion bombardment and annealing and by molecular beam epitaxy.
Journal ArticleDOI
Ion implantation damage in Hg0.8Cd0.2Te
TL;DR: Damage produced by ion implantation of B+ and As+ through an anodic oxide into Hg0.8Cd0.2Te has been examined by transmission electron microscopy, indicating the existence of a threshold dose for defect formation.
Journal ArticleDOI
Ion mill damage in n‐HgCdTe
TL;DR: In this paper, it was shown that the severity of ion milling damage can be reduced with a bake, either at 100 or 185°C. This damage is characterized by a bias-dependent dark current in metal-insulator semiconductor devices.
Journal ArticleDOI
Preferential sputtering and radiation enhanced segregation in palladium-platinum alloys
TL;DR: In this article, five palladium-platinum alloys of different compositions ranging from 10 to 90 at% Pd were sputtered with 1 keV Ar+ ions, and the surface concentrations were then determined with Auger electron spectroscopy (AES) and low energy ion scattering spectraopy (ISS).
Journal ArticleDOI
Low power ion-beam-assisted etching of indium phosphide
TL;DR: In this paper, the etching properties of ion-beam-assisted InP as a function of substrate temperature, ionbeam parameters, and reactive chlorine flux in such a system are presented.