Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Book ChapterDOI
Ion-Bombardment-Induced Composition Changes in Alloys and Compounds
TL;DR: In spite of the vast amount of literature on preferential sputtering, it is difficult to establish experimental proof of the mere existence of preferential stuttering, let alone to confirm the various proposed mechanisms as mentioned in this paper.
Journal ArticleDOI
Sputtering of metal alloys containing second‐phase precipitates
TL;DR: In this paper, a real-time monitor of the transient sputtering characteristics of alloy samples containing various amounts of second-phase precipitates was used to show that cone formation in these alloys was due to masking of the matrix by slow sputtering second phase precipitates.
Journal ArticleDOI
Determination of crystallographic polarity of CdTe crystals with Auger electron spectroscopy
TL;DR: In this article, the anomalous absorption of x rays, the convergent beam method of transmission electron microscopy, and chemical etching were used to identify the crystallographic polarity of CdTe crystals.
Journal ArticleDOI
Search for preferential sputtering in Ag/Au alloys
TL;DR: In this article, the sputtering yields from AgxAu1−x alloys were obtained by 20Ne+ ion scattering spectroscopy in order to detect preferential sputtering effects.
Journal ArticleDOI
Hg1-xCdxTe doping by ion-beam treatment
TL;DR: In this paper, the electron concentration in the treated Hg1-xCdxTe samples was determined by the overall concentration of the background donor impurities and native donor defects.