Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
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Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
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Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Thermal pulse annealing of boron‐implanted HgCdTe
TL;DR: In this paper, the authors successfully annealed a 1015 11B/cm2 250 kV implant into epitaxial Hg0.64Cd0.36Te layers held at LN2 temperature, as observed by MeV 4He ion channeling and Rutherford backscattering.
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Comments on the composition of anodic films on Hg0.8Cd0.2Te
TL;DR: In this paper, it is argued that the use of ion sputtering (e.g., as a depth profiling technique) significantly perturbs the chemical structure of anodic films within the probing depths of electron spectroscopy (AES and XPS).
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Radiation damage of gallium arsenide induced by reactive ion etching
TL;DR: In this article, the number of displaced Ga and As atoms observed by Rutherford backscattering spectrometry aligned spectra is 7.8×1015 cm−2 and 1.3×1016 cm −2 at rf power of 300 W (0.47 W/cm2) and 500 W ( 0.78 W/ cm2), respectively.
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Electron beam effects during the sputter profiling of thin Au/Ag films analysed by Auger electron spectroscopy
Siegfried Hofmann,A. Zalar +1 more
TL;DR: In this article, the depth profiles of thin films consisting of a 200 A layer of silver deposited on a glass substrate and an overlayer of gold were obtained by simultaneous argon ion sputtering and Auger electron spectroscopy.
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Surface analysis of reactive ion-etched InP
TL;DR: In this article, a dry-etch process for InP was developed using a mixture of Cl2, Ar, CH4, and H2, which resulted in a high etch rate and good anisotropy.