Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
Auger electron spectroscopy study of cleaved and sputter-etched In0.53Ga0.47As surfaces
TL;DR: In this article, the authors characterized the composition of the as-grown (100) and cleaved (110) surfaces, which have been found to be indium enriched and stoichiometric respectively.
Journal ArticleDOI
Diffraction effects in Auger quantitative analysis on III–V compounds
Sergio Valeri,A. di Bona,E. Nava +2 more
TL;DR: In this article, the effects of incoming beam diffraction on the quantitative analysis of cleaved, sputtered and Cs covered III-V compounds were investigated and it was shown that measurements must be taken into account for crystalline specimen orientation with respect to the incident beam direction.
Journal ArticleDOI
Structure and Properties of Silicon Carbide Implanted with Chromium
Carl J. McHargue,J.M. Williams +1 more
TL;DR: The effects of implanting chromium at fluences of up to 2.6 × 10 16 /cm 2 on the structure and properties of single and polycrystalline samples of SiC were studied as discussed by the authors.
Journal ArticleDOI
Ion implantation damage and annealing in GaSb
TL;DR: The production and annealing of damage in GaSb implanted at room temperature with 150 keV Ar+-ions over a wide dose range are investigated by Rutherford backscattering spectrometry in combination with the channeling technique and by transmission electron microscopy as discussed by the authors.
Journal ArticleDOI
Oxidation of Hg 1−x Cd x Te studied with surface sensitive techniques
TL;DR: In this article, surface sensitive electron spectroscopies were used to monitor the initial steps of formation of a native oxide on atomically clean cleaved Hgl-xCdxTe single crystal surfaces in ultrahigh vacuum (UHV).