Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
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Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
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Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
Effects of ion etching on the properties of GaAs.
TL;DR: Effects of ion etching on the optical properties and lattice disorder of GaAs were studied by means of photoluminescence, He backscattering, and enhanced chemical etching to show the existence of an amorphous layer, the thickness of which is 20% larger than the value estimated by LSS theory.
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Sputter-induced surface composition changes in alloys
TL;DR: In this article, the effects of radiation-induced segregation and preferential sputtering on the surface of dilute binary alloys were calculated using a kinetic model that includes the effects from both preferential and radiation segregation and reached a steady state value determined by the sputtering coefficients of the alloy components.
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Capless annealing of ion‐implanted GaAs
A. A. Immorlica,F. H. Eisen +1 more
TL;DR: In this article, a method for capless annealing of ion-implanted GaAs, which gives electrical activation of Seimplanted wafers nearly identical to that obtained with sputtered silicon nitride caps, is described.
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Charging and charge compensation in AES analysis of insulators
TL;DR: In this paper, the basic principles of charging and its effect on qualitative and quantitative AES are described, such as reducing the primary current density, minimizing the absorbed current path, and increasing the total secondary electron emission.
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Anodic oxide composition and Hg depletion at the oxide–semiconductor interface of Hg1−xCdxTe
TL;DR: In this paper, the authors analyzed the oxide, interface, and bulk semiconductor regions of Hg0.8Cd0.2Te with anodic oxide films of 360, 1200, 1600, and 1600 A chemically etched to 1200 A.