Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
More filters
Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
More filters
Journal ArticleDOI
Ion channeling study of P implantation damage in CdTe
TL;DR: In this article, the authors describe the evolution of the damage resulting from P implantation in CdTe as a function of fluence and implantation energy, and investigate the damage produced.
Journal ArticleDOI
Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopy
TL;DR: In this article, the authors examined the periodic nature of the superlattice structure through all ten periods, although the Al signal did not appear to drop to zero in the GaAs layers, probably due to sputter effects.
Journal ArticleDOI
LEED analysis of the principal nonpolar (112̄0) and (101̄0) surfaces of cadmium sulfide
Shih−Chia Chang,Peter Mark +1 more
TL;DR: In this article, a LEED analysis of the clean (1120 and (1010) nonpolar surfaces of CdS prepared by an ion bombardment−thermal anneal technique reveals that only integral−order beams are observed with both surfaces.
Journal ArticleDOI
Raman-scattering and optical studies of argon-etched GaAs surfaces
TL;DR: The damage layer caused by argon etching appears to be characterized by a very high density of point defects, which previous work suggests may be arsenic vacancies.
Journal ArticleDOI
Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe
TL;DR: A preliminary investigation of the effects of implantation and annealing temperatures on implantation induced damage in HgCdTe was undertaken as discussed by the authors, where Rutherford backscattering (RBS) channeling experiments were used to study the surface condition and distribution of implanted induced defects in the crystal.