Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
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McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
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Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
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Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
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Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
Reactive Ion-Beam Etching of InP with Cl2
TL;DR: In this paper, the sputtering yield increases linearly with the ion extraction voltage above a threshold voltage and the gas pressure, and is dominated by the chemically reactive etching, and offers a higher etch rate and a smoother surface.
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Summary Abstract: Surface topography of electronic materials following oxygen and cesium ion bombardment
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An investigation of Si0.5Ge0.5 alloy oxidation by high dose oxygen implantation
J.E. Castle,H.D. Liu,John F. Watts,J.P. Zhang,P.L.F. Hemment,U. Bussmann,A.K. Robinson,S.M. Newstead,A.R. Powell,Terry E. Whall,Evan H. C. Parker +10 more
TL;DR: In this article, an attempt to implant a high dose (up to 1.8 × 1018 cm−2) O+ ions into a Si0.5Ge 0.5 alloy grown by molecular beam epitaxy (MBE) was made in this work, and the oxidation of the alloy by the implantation before and after thermal treatment was studied using X-ray photoelectron spectroscopy (XPS).
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Generation and manipulation of atomic‐scale structures with the STM
TL;DR: In this paper, the onpurpose modification of a solid (WSe2) on an atomic scale and without locally destroying the atomic order of the lattice is demonstrated with the STM using different writing techniques.
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Argon bombardment-induced topography development on InP
TL;DR: In this paper, an ion dose of the order of 1015 Ar+ cm−2 was applied to InP (100) samples, n-doped with S atoms to 4 × 1018 cm−3 and to 6 × 101 8 cm− 3, were bombarded by low energy (0.5 to 5 keV) argon ions.