Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
The effect of temperature on the surface structure and stoichiometry of (100) InP surfaces
C.R. Bayliss,D.L. Kirk +1 more
TL;DR: In this paper, an increased annealing temperature, in vacuum, results in the InP surface and near-surface material being progressively depleted of phosphorus, which is accompanied by a restructuring of the surface, which results in surface unit cells having (4 × 1) and (2 × 8) surface vectors.
Journal ArticleDOI
Investigation of the mechanism of Ar+ ion‐assisted Cl2 etching of GaAs{110}: Role of ion‐induced charge acceptor states
TL;DR: In this article, an investigation of the Ar+ ion-assisted Cl2/GaAs{110} etching reaction mechanism is presented using modulated supersonic beam scattering and time-of-flight techniques.
Journal ArticleDOI
Ion Beam Modification of Ceramics
TL;DR: In this paper, the effects of ionizing effects as well as displacement collisions on the structure and properties of implanted ceramics are illustrated for Al2O3 implanted with chromium or zirconium.
Journal ArticleDOI
Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon
W. Wach,Klaus Wittmaack +1 more
TL;DR: In this article, the retention of 20 keV xenon in silicon dioxide and silicon has been studied by means of Rutherford backscattering, which was achieved by xenon implantation at elevated oxygen pressure.
Journal ArticleDOI
(HgCd)Te–SiO2 interface structure
TL;DR: In this article, the authors investigated the composition and structure of the interface between PHOTOX■ SiO2 and HgCdTe and reported that the AES measurements indicate a Te count rate similar to that in bulk HgcdTe.