Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
Optical, Chemical and Electrical Characterization of Ion-Etched Gallium Arsenide Surfaces
G. F. Feng,Mark Holtz,Richard Zallen,J. M. Epp,J. G. Dillard,E. D. Cole,P. Johnson,S. Sen,L. C. Burton +8 more
TL;DR: In this paper, surface chemistry and electrical measurements are reported for Ar+-ion bombarded (100) GaAs surfaces, with ion energies from 0.5 to 4 keV.
Journal ArticleDOI
Crystalline effects on Auger and photoelectron emission from clean and Cs-covered GaAs(110) surfaces
TL;DR: In this article, angular-resolved Auger electron spectroscopy (ARAES) and X-ray photoelectron diffraction (XPD) were applied to the structural study of cleaved or sputter-processed GaAs (110) surface and of the Cs/GaAs interface.
Journal Article
Experimental evidence for indium island formation on clean InAs(111) and InSb(111) surfaces
Journal ArticleDOI
Dose rate effects in indium-implanted Hg1-xCdxTe
L.K. Magel,Thomas W. Sigmon +1 more
TL;DR: In this paper, the effects of temperature and ion current on ion-implantation induced disorder in Hg0.7Cd0.3Te have been investigated using various doses of indium at 300 keV using different implant currents and heat sink conditions.
Journal ArticleDOI
11B+ implantation and postimplant anneal studies in Hg1−x CdxTe
T.-M. Kao,T.W. Sigmon +1 more
TL;DR: In this paper, the change in crystal quality and electrical properties of as-implanted and postimplant annealed Hg1−x CdxTe was studied using a multistage, low temperature (≤ 320°C) post-annealing process with a native oxide encapsulation, recovering the implantation damage and activating a significant fraction of the implanted impurity.