Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
Sudden surface roughening followed by levelling observed in SIMS analysis of InP‐containing III–V multilayers
K. Miethe,E. Kuphal +1 more
TL;DR: In this article, an epitaxially grown III-V multilayer system with an InP overlayer (80 nm thick) subjected to secondary ion mass spectrometry (SIMS) depth profiling was found to develop an extreme topography in the overlayer.
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Sputter induced near surface electronic defects in group II–IV compound semiconductor alloys
TL;DR: In this article, the authors report on near surface electronic defects generated through 5 keV Ar + ion beam sputtering on (110) oriented freshly cleaved surfaces of CdTe, CdSe y Te 1− y and Zn x Cd 1− x Te.
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The Production of Periodic Surface Features by Sputtering and Related Processes
Journal ArticleDOI
Summary Abstract: An interpretation of the ``ethylenic,'' ``carbidic,'' and ``graphitic'' Auger line shapes of chemisorbed carbon species
F. L. Hutson,D. E. Ramaker +1 more
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Investigation of Random and Channeling Ar + Implantation-Induced Damage in Al(In)GaAs/GaAs Quantum Wells
TL;DR: In this article, the effect of ion channeling on the defect profile was investigated by varying the angle of incidence of the ion beam systematically through the major crystallographic axes of the sample.