Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
An XPS study of GaN thin films on GaAs
TL;DR: In this article, the energies of photoelectron and Auger lines of gallium and nitrogen in GaN thin films obtained by reactive sputtering are derived, and the XPS surface analysis of the films gives a chemical content of ∼20% gallium oxide.
Journal ArticleDOI
Ion beam modification of 6H/15R SiC crystals☆
TL;DR: In this paper, the Rutherford backscattering channeling technique was used to characterize atomic displacement effects resulting from implantation and postimplantation annealing at 573 K.
BookDOI
Erosion and growth of solids stimulated by atom and ion beams
TL;DR: The authors of the paper as mentioned in this paper have investigated the evolution of the fas'cinating surface features which develop during sputtering erosion of solids, and how this influences surface morphology evolution through processes involving entrapment of incident species.
Journal ArticleDOI
The amorphization of ceramics by ion beams
TL;DR: The influence of implantation parameters fluence, substrate temperature, and chemical species on the formation of amorphous phases in Al/sub 2/O/sub 3/ and..cap alpha..-SiC was studied.
Amorphization of ceramics by ion beams
TL;DR: The influence of implantation parameters fluence, substrate temperature, and chemical species on the formation of amorphous phases in Al/sub 2/O/sub 3/ and..cap alpha..-SiC was studied as discussed by the authors.