Journal ArticleDOI
Sputtering of compound semiconductor surfaces. II: Compositional changes and radiation-induced topography and damage
TLDR
In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.Abstract:
Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.read more
Citations
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Journal ArticleDOI
Trends in sputtering
TL;DR: In this article, the authors summarize the trends observed when elemental and multicomponent materials are exposed to energetic ion beams, focusing on low-energy (low-energy) sputtering.
Journal ArticleDOI
McGraw-Hill Encyclopedia of Science and Technology
TL;DR: Unlike other encyclopedias it contains almost no historical or biographical discussions, but to allow for longer essays consists entirely of modern factual presentations of scientific subjects.
Journal ArticleDOI
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
TL;DR: In this paper, an organic film-based image is produced, which is subsequently transferred by plasma etching techniques into underlying films/substrates to produce nanoscale materials templates.
Journal ArticleDOI
Universal equation for argon gas cluster sputtering yields.
TL;DR: In this article, an analysis is made of the sputtering yields of materials for argon gas cluster ion beams used in SIMS and XPS as a function of the beam energy, E, and the cluster size, n.
Journal ArticleDOI
Diffusion of fission products and radiation damage in SiC
TL;DR: In this paper, the diffusion of the important fission products (silver, caesium, iodine and strontium) in polycrystalline 3C-SiC is discussed.
References
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Journal ArticleDOI
A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InP
A. G. Cullis,R.F.C. Farrow +1 more
TL;DR: In this paper, the TEM studies confirmed the epitaxial relation indicated by reflection high energy electron diffraction investigations but showed in addition that films approximately 200 A thick were composed of microdomains (200-400 A in diameter) of mutually orthogonal orientation.
Journal ArticleDOI
The c(4 × 4) clean surface reconstruction of InSb(001) formed by UHV chemical etching using iodine and chlorine
TL;DR: In this article, a clean, indium rich surface formed by noble gas ion bombardment and annealing of a bulk sample, displayed a disordered (4 × 2) LEED pattern with sharp features.
Journal ArticleDOI
Reactive ion etching of InP with Br2‐containing gases to produce smooth, vertical walls: Fabrication of etched‐faceted lasers
K. Takimoto,K. Ohnaka,J. Shibata +2 more
TL;DR: In this article, the first straight vertical walls in InP at a very fast etching rate of 2 μm/min were obtained by using a mixture of Br2 and Ar and raising the substrate temperature.
Journal ArticleDOI
Estimation of Low-Energy Ion Bombardment Damage on GaAs(001) Surface by X-Ray Photoelectron Diffraction
TL;DR: In this article, the structural damage on a GaAs (001) surface was estimated by means of X-ray photoelectron diffraction (XPED), which was induced by 170-1200 eV ion bombardment at various polar angles of ion-incidence.
Book ChapterDOI
CHAPTER 2 – Amorphization and Crystallization of Semiconductors
J.M. Poate,J.S. Williams +1 more
TL;DR: An overview of amorphization and crystallization of semiconductors can be found in this paper, where the authors discuss the use of ion and laser beams to study the amorphisation and crystallisation of semiconductor materials.