Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
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In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.Abstract:
Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.read more
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Journal ArticleDOI
Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition
TL;DR: Gadolinium scandium oxide (Gd-scandate, GdScO3) thin films were grown by atomic layer deposition (ALD) from β-diketonate precursors M(thd)3 (M=Gd, Sc; thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and ozone as discussed by the authors.
Journal ArticleDOI
Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
Dong-Kwon Lee,Zhixin Wan,Jong-Seong Bae,Han-Bo-Ram Lee,Ji-Hoon Ahn,Sang-Deok Kim,Ja-Yong Kim,Se-Hun Kwon +7 more
TL;DR: In this article, the self-limiting growth of PEALD-SnO 2 was confirmed by a careful study of the growth kinetics at 350°C, which exhibited a saturated growth per cycle of 0.072 nm/cycle, which is almost two times higher than that deposited by thermal ALD using SnCl 4 reported earlier.
Journal ArticleDOI
Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
Sebastian Goerke,Mario Ziegler,Andreas Ihring,Jan Dellith,Andreas Undisz,Marco Diegel,Solveig Anders,Uwe Huebner,Markus Rettenmayr,Hans-Georg Meyer +9 more
TL;DR: In this article, the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of aluminum nitride (AlN) thin films with thicknesses from 20 to 100nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD).
Journal ArticleDOI
Atomic layer deposition enhanced grafting of phosphorylcholine on stainless steel for intravascular stents
TL;DR: Alumina layer can significantly enhance the surface grafting of APS and MPC on SS; and in turn efficiently inhibit protein adsorption and platelet adhesion, and promote the attachment and proliferation of human umbilical vein endothelial cells (HUVEC) on the surfaces.
Journal ArticleDOI
Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel
Emma Härkönen,SE Stephen Potts,Wilhelmus M. M. Kessels,Belén Díaz,Belén Díaz,Antoine Seyeux,Antoine Seyeux,Jolanta Światowska,Jolanta Światowska,Vincent Maurice,Vincent Maurice,Philippe Marcus,Philippe Marcus,György Radnóczi,Lajos Tóth,Maarit Kariniemi,Jaakko Niinistö,Mikko Ritala +17 more
TL;DR: In this paper, the effect of H2-Ar plasma pre-treatment prior to thermal ALD and plasma-enhanced atomic layer deposition (PEALD) of Al2O3 films on steel for corrosion protection was investigated.
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