Journal ArticleDOI
Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's
Reads0
Chats0
TLDR
In this article, the authors investigated the role of hot electrons and hot holes in the generation of fast interface traps by channel hot-carrier injection in n-channel MOS transistors.Abstract:
The generation of fast interface traps due to channel hot-carrier injection in n-channel MOS transistors is investigated as a function of stress temperature. The relative importance of the mechanisms for the generation of fast interface traps by hot electrons and hot holes is shown to be independent of the temperature. In all cases the generation of fast interface traps is slightly reduced at lower temperatures. The degradation of transistor I/sub d/-V/sub g/ characteristics, on the other hand, is strongly enhanced at lower temperatures. This is explained by a previously suggested model on the temperature dependence of the influence of the local narrow potential barrier, induced at the drain junction as a result of degradation, on the reverse-mode current characteristics. It is shown that only a minor part of the large current reduction at low temperatures can be ascribed to enhanced electron trapping. >read more
Citations
More filters
Journal ArticleDOI
Comments on "The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors" [with reply]
TL;DR: Doyle et al. as discussed by the authors showed that neutral electron trap generation can occur in MOSFETs when large oxide fields occur during operation, and they concluded that electron traps are created during channel hot-hole injection and must be taken into consideration in hot carrier lifetime estimates under AC conditions.
Proceedings ArticleDOI
Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature
TL;DR: In this article, a three mode interface trap generation is proposed based on the energy acquisition involved in distinct interactions in all the V GS, V DS (V BS ) conditions as a single I DS lifetime dependence is observed with V GD > 0.
Journal ArticleDOI
Giant isotope effect in hot electron degradation of metal oxide silicon devices
TL;DR: In this paper, the authors summarize their experience and present new results of secondary ion mass spectroscopy that correlate deuterium accumulation with reduced hot electron degradation, and also present a first account of the physical theory of this effect with a view on engineering application.
Journal ArticleDOI
Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
TL;DR: In this article, an approach to the application of the charge pumping technique is proposed as a tool for the measurement of interface trap energy distributions in small area MOS transistors, where only one energy window is defined, and forced to move through the bandgap by changing the sample temperature.
Journal ArticleDOI
MOSFET substrate current model for circuit simulation
Narain D. Arora,M.S. Sharma +1 more
TL;DR: In this paper, a simple MOSFET substrate current model suitable for a circuit simulator is presented, and the effect of substrate bias on substrate current is modeled without introducing additional parameters.
References
More filters
Journal ArticleDOI
A reliable approach to charge-pumping measurements in MOS transistors
TL;DR: In this article, a new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented.
Journal ArticleDOI
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
TL;DR: In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.
Journal ArticleDOI
An empirical model for device degradation due to hot-carrier injection
E. Takeda,N. Suzuki +1 more
TL;DR: In this article, an empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented, and the relationship between device degradation, drain voltage, and substrate current is clarified on the basis of experiments and modeling.
Journal ArticleDOI
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
TL;DR: In this article, a charge pumping technique is used to determine the degradation mechanisms in MOS transistors under all kinds of aging conditions (e.g., irradiation, hot-carrier, Fowler-Nordheim stress) and to quantify the degradation.
Journal ArticleDOI
Temperature dependence of avalanche multiplication in semiconductors
C.R. Crowell,S. M. Sze +1 more
TL;DR: In this article, the authors investigated the temperature dependence of the carrier mean free path for optical phonon scattering and the mean energy loss per collision for any operating temperature once the appropriate parameters have been determined.