Journal ArticleDOI
Thermally Grown TiO 2 and Al 2 O 3 for GaN-Based MOS-HEMTs
Akanksha Rawat,Mudassar Meer,Vivek Kumar Surana,Navneet Bhardwaj,Vikas Pendem,Navya Sri Garigapati,Yogendra K. Yadav,Swaroop Ganguly,Dipankar Saha +8 more
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TLDR
In this paper, the potential use of thermally grown TiO2 and Al2O3 oxides as gate dielectrics for GaN-based high-electron-mobility-transistors was demonstrated.Abstract:
We have demonstrated the potential use of thermally grown TiO2 and Al2O3 oxides as gate dielectrics for GaN-based high-electron-mobility-transistors. TiO2 and Al2O3 are found to provide negative and positive band offsets with AlGaN, respectively. A significant performance improvement on various device characteristics provides evidence for its potential use. The oxides are formed by a combination of predeposition of a thin film and followed by oxidation in pure O2 environment. The formation and thickness of the oxides are confirmed through the X-ray photoelectron spectroscopy and the transmission electron microscopy. The performance improvement for TiO2- and Al2O3-based oxide gates have been identified in terms of a ideality factor and a reduction in the gate leakage current in comparison with that of control devices. This is further augmented by an increase in the ${n}_{s}\times \mu $ product. The ON/OFF current ratio and turn-ON voltage increase by 2–3 orders of magnitude and 0.3–0.6, respectively, for the Schottky diodes. The negative shift on the capacitance–voltage characteristics is also found to be minimal, indicating higher gate coupling with thermally grown oxides.read more
Citations
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Journal ArticleDOI
Recent Advances in GaN‐Based Power HEMT Devices
Journal ArticleDOI
Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs
Yogendra K. Yadav,Bhanu B. Upadhyay,Mudassar Meer,Navneet Bhardwaj,Swaroop Ganguly,Dipankar Saha +5 more
TL;DR: In this paper, a novel metal scheme for ohmic contact on AlGaN/GaN high-electron-mobility transistors was reported, which showed minimum metal out-diffusion and sharp edge acuity at high-temperature annealing, which facilitates aggressive scaling of source-drain separation.
Journal ArticleDOI
Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO 2 as a Dielectric
Akanksha Rawat,Vivek Kumar Surana,Mudassar Meer,Navneet Bhardwaj,Swaroop Ganguly,Dipankar Saha +5 more
TL;DR: In this paper, a 3.4-nm-thick TiO2 gate insulator exhibits a low gate leakage current of 10−8 Acm−2, which leads to superior device performances in terms of saturation drain current, peak transconductance, subthreshold swing, and unity gain frequency.
Journal ArticleDOI
Realization of high quality silicon nitride deposition at low temperatures
Vivek Kumar Surana,Navneet Bhardwaj,Akanksha Rawat,Yogendra K. Yadav,Swaroop Ganguly,Dipankar Saha +5 more
TL;DR: In this paper, the authors demonstrate the low temperature thin-film deposition of silicon nitride (SiN x) for III-nitride-based high electron mobility transistors using inductively coupled plasma chemical vapor deposition.
Journal ArticleDOI
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
Ritam Sarkar,Swagata Bhunia,Dhiman Nag,B. C. Barik,K. Das Gupta,Dipankar Saha,Swaroop Ganguly,Apurba Laha,Jori Lemettinen,Christoffer Kauppinen,Iurii Kim,Sami Suihkonen,Philipp Gribisch,H. J. Osten +13 more
TL;DR: In this paper, the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate was reported.
References
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Journal ArticleDOI
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
TL;DR: In this paper, a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic layer-deposited (ALD) Al2O3 as the gate dielectric is presented.
Journal ArticleDOI
MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
Stephen A. Campbell,D. C. Gilmer,Xiao-Chuan Wang,Ming-Ta Hsieh,Hyeon-Seag Kim,Wayne L. Gladfelter,Jinhua Yan +6 more
TL;DR: The quantum capacitance effect in the accumulation layer of polycrystalline anatase TiO/sub 2/ has been investigated in this paper, where the authors showed that N-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFETs.
Journal ArticleDOI
Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy
TL;DR: In this paper, an angle-resolved core-level and valence-band x-ray photo-electron spectroscopy (XPS) data for GaAs(110), Ge(110, and Ge(111) surfaces are analyzed to determine core level to valence band binding energy differences to a precision of the order of the room-temperature thermal energy.