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Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

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TLDR
A comprehensive coverage of recent advances in metal chalcogenides and their correlated thermoelectric enhancement mechanisms are provided in this article, with the hope that they can inspire further enhancement of performance.
Abstract
Due to the urgency of our energy and environmental issues, a variety of cost-effective and pollution-free technologies have attracted considerable attention, among which thermoelectric technology has made enormous progress. Substantial numbers of new thermoelectric materials are created with high figure of merit (ZT) by using advanced nanoscience and nanotechnology. This is especially true in the case of metal-chalcogenide-based materials, which possess both relatively high ZT and low cost among all the different kinds of thermoelectric materials. Here, comprehensive coverage of recent advances in metal chalcogenides and their correlated thermoelectric enhancement mechanisms are provided. Several new strategies are summarized with the hope that they can inspire further enhancement of performance, both in metal chalcogenides and in other materials.

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Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance.

TL;DR: The most recent progress in superhigh-performance GeTe-based thermoelectric materials is reviewed with a focus on the crystal structures, phase transitions, resonant bondings, multiple valance bands, and phonon dispersions, which diversify the degrees of freedom to tune the transport properties of electrons and phonons for GeTe.
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Achieving zT > 2 in p‐Type AgSbTe2−xSex Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults

TL;DR: In this paper, a synergetic strategy of simultaneously enhancing power factor and strengthening phonon scattering developed in this study opens up a robust pathway to tailor hermoelectric performance, and significantly enhanced power factor is realized in p-type AgSbTe2−xSex alloys.
References
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Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
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High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

TL;DR: Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects, which makes these materials useful for cooling and power generation.
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Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

TL;DR: An unprecedented ZT of 2.6 ± 0.3 at 923 K is reported in SnSe single crystals measured along the b axis of the room-temperature orthorhombic unit cell, which highlights alternative strategies to nanostructuring for achieving high thermoelectric performance.
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High-performance bulk thermoelectrics with all-scale hierarchical architectures

TL;DR: It is shown that heat-carrying phonons with long mean free paths can be scattered by controlling and fine-tuning the mesoscale architecture of nanostructured thermoelectric materials, and an increase in ZT beyond the threshold of 2 highlights the role of, and need for, multiscale hierarchical architecture in controlling phonon scattering in bulk thermoeLECTrics.
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