Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors

TLDR: The fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer that retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation is reported.

Abstract: Despite recent progress in the production of bendable thin-film transistors, their development is limited by leakage currents and fragile inorganic oxides. Combining graphene and single-walled carbon nanotube electrodes with a geometrically wrinkled inorganic layer, highly stretchable and transparent field-effect transistors have now been demonstrated.