Proceedings ArticleDOI
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
L. De Michielis,Livio Lattanzio,Pierpaolo Palestri,Luca Selmi,Adrian M. Ionescu +4 more
- pp 111-112
TLDR
In this article, a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism is proposed.Abstract:
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus allowing a reduction of the supply voltage and power consumption in logic applications [2]. Several TFETs with point Subthreshold Swing (SS) lower than 60mV/dec have been experimentally demonstrated with different architectures as conventional single gate Silicon-on-Insulator (SOI), Double Gate (DG) and Gate-All-Around (GAA) [3,4]. Unfortunately in all cases a relatively large average SS and a poor on-current have been observed.read more
Citations
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Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TL;DR: Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
Journal ArticleDOI
Dielectric Modulated Tunnel Field-Effect Transistor—A Biomolecule Sensor
TL;DR: In this article, a dielectric modulated double-gate tunnel field effect transistor (DG-TFET)-based sensor was proposed for low power consumption label-free biomolecule detection applications.
Journal ArticleDOI
Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET
Amey Mahadev Walke,Anne Vandooren,Rita Rooyackers,Daniele Leonelli,Andriy Hikavyy,Roger Loo,Anne S. Verhulst,Kuo-Hsing Kao,Cedric Huyghebaert,Guido Groeseneken,Valipe Ramgopal Rao,Krishna Kumar Bhuwalka,Marc Heyns,Nadine Collaert,Aaron Thean +14 more
TL;DR: In this article, a Si/Si0.55Ge0.45 heterojunction line tunnel field effect transistor (TFET) was constructed with a 1-μm gate length and showed an increase in tunneling current in excess of 20 μA/μm at VGS=VDS=1.2 V.
Journal ArticleDOI
Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
TL;DR: In this paper, the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current.
Journal ArticleDOI
A High-Performance Inverted-C Tunnel Junction FET With Source–Channel Overlap Pockets
TL;DR: In this article, a gate over channel overlap pockets (GO-SCOPs) is proposed to create vertical tunneling path within the source and the channel extension that lead to a faster thinning of the lateral tunneling barrier between the sources and channel regions.