Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.
Yuan Dong,Wei Wang,Shengqiang Xu,Dian Lei,Xiao Gong,Xin Guo,Hong Wang,Shuh-Ying Lee,Wan Khai Loke,Soon Fatt Yoon,Yee-Chia Yeo +10 more
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TLDR
A germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 μm-wavelength light detection is demonstrated and a 3 dB bandwidth of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2μm.Abstract:
We report the demonstration of a germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 μm-wavelength light detection. Characterization of the photodetector in both direct current (DC) and radio frequency (RF) regimes was performed. At the bias voltage of -1 V, a dark current density of 0.031 A/cm2 is realized at room-temperature, which is among the lowest reported values for Ge1-xSnx-on-Si p-i-n photodiodes. In addition, for the first time, a 3 dB bandwidth (f3dB) of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2 μm. It is anticipated that further device optimization would extend the f3dB to above 10 GHz.read more
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Journal ArticleDOI
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
Huong Tran,Huong Tran,Thach Pham,Thach Pham,Joe Margetis,Yiyin Zhou,Yiyin Zhou,Wei Dou,Perry C. Grant,Perry C. Grant,Joshua M. Grant,Sattar Al-Kabi,Greg Sun,Richard A. Soref,John Tolle,Yong-Hang Zhang,Wei Du,Baohua Li,Mansour Mortazavi,Shui-Qing Yu +19 more
TL;DR: The GeSn detector as discussed by the authors offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility, which can be used for high-quality IR photodeter.
Journal ArticleDOI
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.
Shengqiang Xu,Wei Wang,Yi-Chiau Huang,Yuan Dong,Saeid Masudy-Panah,Hong Wang,Xiao Gong,Yee-Chia Yeo +7 more
TL;DR: The potential for using GeSn to extend the utility of Si photonics in 2 µm band integrated optical transceivers for communication applications is illustrated by high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode.
Posted Content
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran,Thach Pham,Joe Margetis,Yiyin Zhou,Wei Dou,Perry C. Grant,Joshua M. Grant,Sattar Al-Kabi,Greg Sun,Richard A. Soref,John Tolle,Yong-Hang Zhang,Wei Du,Baohua Li,Mansour Mortazavi,Shui-Qing Yu +15 more
TL;DR: In this article, Si-based GeSn mid-infrared photodetectors have been used to obtain a measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors.
Journal ArticleDOI
High-speed uni-traveling carrier photodiode for 2 μm wavelength application
TL;DR: In this paper, the authors demonstrate a high-speed uni-traveling carrier photodiode for 2-μm applications with InGaAs/GaAsSb type-II multiple quantum wells as the absorption region, which is lattice-matched to InP.
Journal ArticleDOI
Scaling capacity of fiber-optic transmission systems via silicon photonics
Wei Shi,Ye Tian,Antoine Gervais +2 more
TL;DR: In this article, the authors provide a system perspective and review recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits per-transmission link.
References
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