Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
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A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
An Analog LO Harmonic Suppression Technique for SDR Receivers
TL;DR: A low-complexity analog technique to suppress the local oscillator (LO) harmonics in software-defined radios is presented and accurate mathematical analyses show that an effective attenuation of the LO harmonics is achieved by modulating the transc conductance of the low-noise transconductance amplifier (LNTA) with a raised-cosine signal.
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A low-current and low-distortion wideband amplifier using 0.2-/spl mu/m gate MODFET fabricated by using phase-shift lithography
Hidetoshi Ishida,K. Miyatsuji,Tsuyoshi Tanaka,H. Takenaka,Hidetoshi Furukawa,M. Nishitsuji,A. Tamura,Daisuke Ueda +7 more
TL;DR: In this paper, a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 mA from 100 MHz to 3 GHz was developed, which achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz.
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New Concept for Power Compression Improvement of GaN Cascodes in Broadband Power Amplifiers
TL;DR: In this paper, the authors proposed a new concept to reduce high-frequency power compression in broadband power amplifiers using cascodes, which significantly improves the gain compression of the feedback power amplifier at higher frequencies without changing the small-signal performance.
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Broadband ultra-low-noise amplifier for square kilometre array application
Hai Phuong. Le,K. Shah,J Singh +2 more
TL;DR: In this article, the design and implementation of a fully on-chip wideband low-noise amplifier (LNA) using 0.25 μm silicon-on-sapphire technology is reported.
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Compact green design structure of distributed amplifier for 10-30 GHz UWB wireless receivers
TL;DR: In this article, the authors proposed a new compact green design structure of distributed amplifiers in series with a common-source circuit to reduce power-dissipation and noise figure and increase gain-bandwidth.