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Ultrawideband LNA 1960–2019: Review

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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.

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Proceedings Article

A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network

Aly Ismail, +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.

A cooled 1- to 2-GHz balanced HEMT amplifier

Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.

On 32-GHz cryogenically cooled HEMT low-noise amplifiers

TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI

A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications

Humirah Majeed, +1 more
- 06 Jun 2022 - 
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI

0.3–14 and 16–28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

TL;DR: In this paper, the authors presented two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3-14 and 16-28 GHz.
Journal ArticleDOI

Broadband Low-Noise Amplifier With Fast Power Switching for 3.1–10.6-GHz Ultra-Wideband Applications

TL;DR: In this paper, a fast switching noise-cancelling low-noise amplifier (LNA) is presented using 0.13-μm m CMOS for 3.1-10.6 GHz ultra wideband applications.
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A Frequency-Selective Broadband Low-Noise Amplifier With Double-Loop Transformer Feedback

TL;DR: A frequency-selective, power-to-current ( P- I) broadband low-noise amplifier (FS-LNA) is presented and the use of global and/or local feedback in tandem is investigated, where monolithic transformers realize the feedback loops.
Journal ArticleDOI

1 V, 0.18 μm-area and power efficient UWB LNA utilising active inductors

TL;DR: In this paper, a low-noise amplifier (LNA) for the lower ultra wideband (UWB) communication bandwidth (31-48 GHz) utilising area and power efficient active inductor implementation is presented.
Journal ArticleDOI

On the performance of low-noise low-DC-power-consumption cryogenic amplifiers

TL;DR: In this paper, the performance of broadband low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature.