Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
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A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs
TL;DR: In this paper, the authors present a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source.
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An Inductor-Less Noise-Cancelling Broadband Low Noise Amplifier With Composite Transistor Pair in 90 nm CMOS Technology
TL;DR: A new broadband low-noise amplifier (LNA) is proposed, which utilizes a composite NMOS/PMOS cross-coupled transistor pair to increase the amplification while reducing the noise figure.
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A low-power low-noise accurate linear-in-dB variable gain amplifier with 500 MHz bandwidth
TL;DR: In this article, a linear-in-dB variable-gain amplifier (VGA) using a pre-distortion circuit to generate the gain-control signal is fabricated in a BiCMOS process with f/sub T/=20 GHz.
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Compact Wideband LNA With Gain and Input Matching Bandwidth Extensions by Transformer
TL;DR: In this article, a transformer gate-drain feedback technique was used to peak the gain at high frequency while the wideband input matching was obtained by employing a new transformer-based input matching network to produce two resonant points separately located at low and high frequencies.
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A 54.4–90 GHz Low-Noise Amplifier in 65-nm CMOS
TL;DR: A transformer-based broadband low-noise amplifier for millimeter-wave application that has four common-source stages and a maximum gain of 17.7 GHz at 67 GHz and a 3-dB gain bandwidth of 35.6 GHz is proposed.