Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI
A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
Cheap 0.36 dB NF broadband multipath LNA
TL;DR: A two-path low-noise amplifier (LNA) designed for the planned MeerKAT radio telescope is presented and it consumes 100 mW of power and costs about $10 to manufacture.
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Band selection filter for ultra-wideband/Ku dual-band low-noise amplifier in the CMOS process
TL;DR: In this paper, a band selection filter (BSF) was proposed for a fully integrated ultra wideband (UWB) 3.8 GHz dual-band low-noise amplifier (LNA) in 0.13µm CMOS technology.
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A Monolithic Mos-Bipolar Audio Amplifier
H. C. Lin,Ramachandra Iyer +1 more
TL;DR: In this article, a one watt AC MOS-Bipolar Audio Amplifier with a voltage gain exceeding 20 dB and the pass-band extending to sub-audio frequencies was designed and integrated.
Journal ArticleDOI
Conditions for optimum noise performance of transistor amplifiers with a reactive source
TL;DR: In this article, the authors defined a signal-to-wideband-average-noise ratio (SNO) for small-signal amplifiers driven from reactive sources such as capacitor microphones.
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Combined Three-State/PWM Signal Coding for Wideband High-Efficiency Class-S Amplifiers
TL;DR: The combined three-state/PWM scheme enables a tradeoff to reduce ACLR while not seriously compromising efficiency and is proposed as a remedy for applications requiring operation with signals spectrally located anywhere within a much wider service bandwidth.