Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI
A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
A 2.8-mW Sub-2-dB Noise-Figure Inductorless Wideband CMOS LNA Employing Multiple Feedback
TL;DR: In this article, a wideband low-noise amplifier (LNA) for multiband wireless communication standards is presented, which uses multiple feedback paths, which add degrees of freedom in the choice of the LNA transconductance to reduce the noise figure and increase the amplification.
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Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems
Xin Guan,Cam Nguyen +1 more
TL;DR: In this article, a distributed amplifier with new cascade inductively coupled common-source gain-cell configuration is presented, which achieves an average power gain of around 10 dB, input match of less than -20 dB, and noise figure of 3.3-6.1 dB with a power consumption of only 19.6 mW over the entire ultra-wideband (UWB) band.
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Broad-Band Design Techniques for Transimpedance Amplifiers
TL;DR: A novel bandwidth enhancement technique based on the combination of capacitive degeneration, broad-band matching network, and the regulated cascode (RGC) input stage is proposed and analyzed, which turns the transimpedance amplifier (TIA) design into a fifth-order low-pass filter with Butterworth response.
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An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback
TL;DR: In this paper, a 1-V ultra-low power, compact, and wideband low-noise amplifier (LNA) using common-gate (CG) NMOS and PMOS transistors as input devices in a complementary current-reuse structure was proposed.
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Design of Full Band UWB Common-Gate LNA
TL;DR: In this paper, a two-stage, common-gate in cascade with cascode, ultra wideband low noise amplifier (LNA) topology is proposed for 3.1 to 10.5 GHz full band application.