Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI
A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
A 12-18 GHz medium-power GaAs MESFET amplifier
TL;DR: In this paper, two medium-power 12-18 GHz GaAs FET amplifiers, one single-ended and one balanced, have been developed, and a minimum output power across the Ku-band of 200 mW with an associated gain of 4.0 dB was achieved with the balanced module.
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A Wideband Low-Noise Variable-Gain Amplifier With a 3.4 dB NF and up to 45 dB Gain Tuning Range in 130-nm CMOS
TL;DR: A low-imbalance active balun topology is being herein proposed, analyzed in detail, designed, and tested, which achieves a gain tuning range of 45 dB, a noise figure of 3.4 dB, and dissipates 19 mW in the maximum gain condition.
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Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems
Jin-Fa Chang,Y.-S. Lin +1 more
TL;DR: In this paper, a 3-10-GHz distributed amplifier with flat and low noise figure (NF) and flat and high power gain (S 21 ) is demonstrated, which is the best reported NF performance for a CMOS UWB DA or low-noise amplifier.
Journal ArticleDOI
Active Eight-Path Filter and LNA With Wide Channel Bandwidth and Center Frequency Tunability
Baktash Behmanesh,S.M. Atarodi +1 more
TL;DR: In this paper, a differential eight-path bandpass filter with tunable center frequency and bandwidth is presented, where a wideband low-noise amplifier (LNA) is designed to precede the 8-path filter and acts as an active single-to-differential converter.
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3.88 dB NF 60 GHz CMOS UWB LNA with small group-delay-variation
Jen-How Lee,Y.-S. Lin +1 more
TL;DR: In this article, a low power and low noise figure (NF) 60 GHz low-noise amplifier (LNA) with excellent phase linearity using standard 90 nm CMOS technology is reported.