Ultrawideband LNA 1960–2019: Review
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This article is published in Iet Circuits Devices & Systems.The article was published on 2021-04-22 and is currently open access. It has received 8 citations till now.read more
Citations
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Proceedings Article
A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network
Aly Ismail,Asad A. Abidi +1 more
TL;DR: In this paper, a SiGe amplifier with on-chip matching network spanning 3-10 GHz was presented, achieving 21dB peak gain, 2.5dB noise figure, and -1dBm input IP3 at 5 GHz, with a 10-mA bias current.
A cooled 1- to 2-GHz balanced HEMT amplifier
Gerardo G. Ortiz,Steven Padin +1 more
Abstract: The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
Journal ArticleDOI
Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks
Jinxiang Zhao,Feng Wang,Shengli Zhang,Kuisong Wang,Chang Liu,Jing Wan,Xiaoxin Liang,Yuepeng Yan +7 more
TL;DR: In this article , the authors proposed a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity.
On 32-GHz cryogenically cooled HEMT low-noise amplifiers
J. J. Bautista,G. G. Ortiz,K. H. G. Duh,W. F. Kopp,P. Ho,P.C. Chao,M.Y. Kao,P. M. Smith,J.M. Ballingall +8 more
TL;DR: In this article, the authors evaluated the performance of a two-stage and a three-stage 32 GHz HEMT amplifier in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K to 12 K.
Journal ArticleDOI
A Common-Gate, gm-boosting LNA Using Active Inductor-Based Input Matching for 3.1–10.6 GHz UWB Applications
Humirah Majeed,A. K. Singh +1 more
TL;DR: In this paper, a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique is presented.
References
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Journal ArticleDOI
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices
Davide Ponton,Pierpaolo Palestri,David Esseni,Luca Selmi,M. Tiebout,Bertrand Parvais,D. Siprak,G. Knoblinger +7 more
TL;DR: This paper deals with the design of single-stage differential low-noise amplifiers for ultra-wideband (UWB) applications, comparing state-of-the-art planar bulk and silicon-on-insulator (SOI) FinFET CMOS technologies featuring 45-nm gate length.
Journal ArticleDOI
A Technique for Differential Noise Figure Measurement of Differential LNAs
Leonid Belostotski,J.W. Haslett +1 more
TL;DR: An approach to measure the noise figure of a differential low-noise amplifier (LNA) based on familiar ldquocold-hotrdquo single-ended noise figure measurements is presented, allowing for automated noisefigure measurements of differential LNAs based on the differential pair topology.
Journal ArticleDOI
A 60 GHz Wideband Phased-Array LNA With Short-Stub Passive Vector Generator
TL;DR: In this paper, a 60 GHz 5 b phased-array low-noise amplifier (LNA) implemented in 90 nm CMOS for short range wireless application is presented, which provides 360 phase controllability over 50-70 GHz band while achieving 12.5 dB gain and 6.55 dB NF.
Journal ArticleDOI
Field-Programmable LNAs With Interferer-Reflecting Loop for Input Linearity Enhancement
TL;DR: A notch filter at the desired operation frequency in the feedback path results in selectivity at the RF input so that all out-of-band blockers are suppressed without the need to know blocker locations and the LNA input linearity is improved.
Journal ArticleDOI
A Multiband Inductor-Reuse CMOS Low-Noise Amplifier
TL;DR: A new multiband, multistandard CMOS low-noise amplifier (LNA) that reuses inductors for different frequency bands to minimize chip area is presented.